Room-temperature exceptional plasticity in defective Bi2Te3-based bulk thermoelectric crystals

被引:33
作者
Deng, Tingting [1 ,2 ]
Gao, Zhiqiang [3 ]
Li, Ze [1 ,2 ,4 ]
Qiu, Pengfei [1 ,2 ,4 ]
Li, Zhi [1 ,4 ]
Yuan, Xinjie [1 ,4 ]
Ming, Chen [1 ]
Wei, Tian-Ran [3 ]
Chen, Lidong [1 ,4 ]
Shi, Xun [1 ,4 ]
机构
[1] Shanghai Inst Ceram, Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine M, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Sch Chem & Mat Sci, Hangzhou, Peoples R China
[3] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai, Peoples R China
[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
基金
中国国家自然科学基金;
关键词
FLEXIBLE THERMOELECTRICS; SEMICONDUCTOR; CERAMICS;
D O I
10.1126/science.adr8450
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The recently discovered metal-like room-temperature plasticity in inorganic semiconductors reshapes our knowledge of the physical properties of materials, giving birth to a series of new-concept functional materials. However, current room-temperature plastic inorganic semiconductors are still very rare, and their performance is inferior to that of classic brittle semiconductors. Taking classic bismuth telluride (Bi2Te3)-based thermoelectric semiconductors as an example, we show that antisite defects can lead to high-density, diverse microstructures that substantially affect mechanical properties and thus successfully transform these bulk semiconductors from brittle to plastic, leading to a high figure of merit of up to 1.05 at 300 kelvin compared with other plastic semiconductors, similar to the best brittle semiconductors. We provide an effective strategy to plastify brittle semiconductors to display good plasticity and excellent functionality simultaneously.
引用
收藏
页码:1112 / 1117
页数:6
相关论文
共 35 条
[1]  
[Anonymous], 2013, Lecture Notes in Chemistry, V86
[2]   The future transistors [J].
Cao, Wei ;
Bu, Huiming ;
Vinet, Maud ;
Cao, Min ;
Takagi, Shinichi ;
Hwang, Sungwoo ;
Ghani, Tahir ;
Banerjee, Kaustav .
NATURE, 2023, 620 (7974) :501-515
[3]   Recent development of two-dimensional transition metal dichalcogenides and their applications [J].
Choi, Wonbong ;
Choudhary, Nitin ;
Han, Gang Hee ;
Park, Juhong ;
Akinwande, Deji ;
Lee, Young Hee .
MATERIALS TODAY, 2017, 20 (03) :116-130
[4]   High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe2-Based Crystals [J].
Deng, Tingting ;
Gao, Zhiqiang ;
Qiu, Pengfei ;
Zhou, Zhengyang ;
Ming, Chen ;
Liu, Zhiping ;
Li, Zhi ;
Yang, Shiqi ;
Wei, Tian-Ran ;
Wang, Genshui ;
Chen, Lidong ;
Shi, Xun .
ADVANCED MATERIALS, 2024, 36 (05)
[5]   Borrowed dislocations for ductility in ceramics [J].
Dong, L. R. ;
Zhang, J. ;
Li, Y. Z. ;
Gao, Y. X. ;
Wang, M. ;
Huang, M. X. ;
Wang, J. S. ;
Chen, K. X. .
SCIENCE, 2024, 385 (6707) :422-427
[6]   Joining of engineering ceramics [J].
Fernie, J. A. ;
Drew, R. A. L. ;
Knowles, K. M. .
INTERNATIONAL MATERIALS REVIEWS, 2009, 54 (05) :283-331
[7]   High-throughput screening of 2D van der Waals crystals with plastic deformability [J].
Gao, Zhiqiang ;
Wei, Tian-Ran ;
Deng, Tingting ;
Qiu, Pengfei ;
Xu, Wei ;
Wang, Yuecun ;
Chen, Lidong ;
Shi, Xun .
NATURE COMMUNICATIONS, 2022, 13 (01)
[8]  
GURUSWAMY S, 1992, SEMICONDUCT SEMIMET, V37, P189
[9]  
Hansen Niels., 2014, Physical Metallurgy, P1681, DOI DOI 10.1016/B978-0-444-53770-6.00017-4
[10]   Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3 [J].
Huang, Xiege ;
Feng, Xiaobin ;
An, Qi ;
Huang, Ben ;
Zhang, Xiaolian ;
Lu, Zhongtao ;
Li, Guodong ;
Zhai, Pengcheng ;
Duan, Bo ;
Snyder, G. Jeffrey ;
Goddard, William A., III ;
Zhang, Qingjie .
MATTER, 2023, 6 (09) :3087-+