Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

被引：1

作者：

Tang, Shun-Wei ^{[1
]}

Fan, Chao-Ta ^{[2
]}

Lin, Ming-Cheng ^{[2
]}

Wu, Tian-Li ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond, Hsinchu, Taiwan

[2] Device Dynam Lab, Res & Dev Dept, Hsinchu, Taiwan

来源：

2022 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA | 2022年

关键词：

Switching stability; power devices; dynamic R-dson; zero voltage switching; hard switching; VOLTAGE; HEMTS;

D O I：

10.1109/IPFA55383.2022.9915772

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities ( up to 300kHz) under a 800V of V-ds during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better R-dson stability under ZVS and HSW during the high-frequency switching.

引用

页数：5

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