Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography

被引：0

作者：

Senzaki, Junji ^{[1
]}

Nishino, Junichi ^{[1
]}

Osanai, Tsutomu ^{[1
]}

机构：

[1] Advanced Power Electronics Research Center, National Institute of Science and Technology, 16-1 Onogawa, Ibaraki, Tsukuba

来源：

Defect and Diffusion Forum | 2024年 / 434卷

关键词：

defect; inspection technique; optical inspection; photoluminescence; X-ray topography;

D O I：

10.4028/p-tZsV2d

中图分类号：

学科分类号：

摘要：

3-channel analysis technique consisting of optical inspection, photoluminescence and Xray topography methods for defect inspection of SiC epitaxial wafers has been investigated. The effectiveness of SiC wafer inspection image correction to enable automatic defect analysis is verified. Next, it is shown that the 3-channel analysis technique improves SiC defect inspection accuracy compared to conventional 2-channel analysis one. © 2024 The Author(s).

引用

页码：143 / 147

页数：4

共 10 条

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