Half metallic ferromagnetism in Mn doped InSb nanosheet

被引：0

作者：

Ismayilova, N. A. ^{[1
,2
,3
]}

Abiyev, A. S. ^{[4
,5
]}

机构：

[1] Minist Sci & Educ, Inst Phys, AZ-1143 Baku, Azerbaijan

[2] Azerbaijan State Univ Econ, CMD AC UNEC Res Ctr, AZ-1001 Baku, Azerbaijan

[3] Khazar Univ, Dept Phys & Elect, Mahsati Str 41, AZ-1096 Baku, Azerbaijan

[4] Int Intergovt Org Joint Inst Nucl Res, Dubna 141980, Russia

[5] Western Caspian Univ, AZ-1001 Baku, Azerbaijan

来源：

INDIAN JOURNAL OF PHYSICS | 2025年

关键词：

Indium antimonide; Nanosheet; DFT; Ferromagnetism; Spintronic device; BAND-STRUCTURE;

D O I：

10.1007/s12648-025-03685-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Diluted magnetic semiconductor compounds are of significant interest for their potential applications in spintronic devices. In this study, we investigated the magnetic properties of InSb nanosheet induced by Mn doping. Using density functional theory (DFT), we initially examined Mn atom doped (with different concentration-2.08, 4.16 and 6.25%) InSb nanosheet at distinct In sites. Our results revealed that Mn doping at either concentration leads to spin splitting in the density of states, indicating that Mn incorporation induces magnetism in InSb nanosheet. PDOS plot of Mn doped InSb nanosheet indicate spin down have a band gap and exhibit semiconductor properties while spin up states don't preserve a wide band gap such as in spin down, additional mid gap levels were observed in forbidden gap. So, weak hybridization between Mn 3d state and 5p, 5 s states of In and 5p state of Sb atoms was observed. Detailed analysis reveals that high concentration of Mn atoms induce half metallic properties in InSb nanosheet which has different potential applications specially in spintronic device.

引用

页数：6

共 37 条

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