A Short-Circuit Protection Method for SiC MOSFET Using Combined Vgs and Vds Detection

被引：0

作者：

Xie, Jiaming ^{[1
]}

Wei, Jinxiao ^{[2
]}

Feng, Hao ^{[1
]}

Wu, Binbing ^{[1
]}

Ran, Li ^{[1
,3
]}

机构：

[1] Chongqing Univ, State Key Lab Power Trans mission Equipment Techno, Chongqing 400044, Peoples R China

[2] Hefei Univ Technol, Hefei 230009, Peoples R China

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, England

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2025年 / 40卷 / 09期

基金：

中国国家自然科学基金;

关键词：

MOSFET; Silicon carbide; Switches; Logic gates; Protection; Insulated gate bipolar transistors; Circuit faults; Threshold voltage; Packaging; Voltage measurement; Faults under load (FUL); gate driver; hard switching faults (HSF); short-circuit protection (SCP); SiC MOSFET;

D O I：

10.1109/TPEL.2025.3565503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a straightforward and reliable short-circuit protection (SCP) method, termed v(gs) and v(ds)-SCP, for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets) by simultaneously monitoring v(gs) and v(ds). The protection is activated when both v(gs) and v(ds) exceed their respective preset thresholds, enabling effective protection against both hard switching faults (HSF) and faults under load (FUL). Compared to existing methods, the proposed circuit design features a simpler structure and is not limited by the packaging type. A test bench has been built to verify the proposed v(gs) and v(ds)-SCP method, and the results show response times of 246 ns for HSF and 415 ns for FUL.

引用

页码：11940 / 11944

页数：5

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