Flexible Self-Powered Ti3C2T x MXene Nanosheet/CdS Nanobelt Photodetector with Enhanced Responsivity and Photosensitivity

被引:4
作者
Nawaz, Muhammad Zubair [1 ]
Khaleeq, Asad [2 ]
Hasan, Waqar ul [2 ]
Ahmad, Waqas [1 ]
Manj, Rana Zafar Abbas [2 ]
Saleem, Muhammad Shahrukh [1 ]
Ullah, Inaam [2 ]
Irfan, Ayesha [2 ]
ul Hasan, Israr Masood [3 ]
Yaqub, Muhammad [4 ]
Asghar, H. M. Noor ul Huda Khan [5 ]
Naz, Gul [6 ]
Li, Mai [2 ]
Wang, Chunrui [2 ]
Illarionov, Yury Yuryevich [1 ]
机构
[1] Southern Univ Sci & Technol, Dept Mat Sci & Engn, Lab 2D Optoelect & Nanoelect L2DON, Shenzhen 518000, Peoples R China
[2] Donghua Univ, Coll Phys, Shanghai 201620, Peoples R China
[3] Chinese Acad Sci, Qinghai Inst Salt Lakes, Key Lab Comprehens & Highly Efficient Utilizat Sal, Xining 810008, Peoples R China
[4] Hunan Univ, Interdisciplinary Res Inst, Changsha 410000, Peoples R China
[5] Balochistan Univ Informat Technol, Dept Phys Engn & Management Sci, Quetta 87300, Pakistan
[6] Islamia Univ Bahawalpur, Inst Phys, Bahawalpur 63100, Pakistan
基金
中国国家自然科学基金;
关键词
2D materials; Ti3C2T x MXene; 1D nanostructure; CdS; heterostructure; sensitivity; self-powered; flexible photodetectors; HIGH-PERFORMANCE; SPINEL FERRITES; EFFICIENCY; ELECTRODE;
D O I
10.1021/acsanm.5c01373
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Can the semimetallic 2D Ti3C2T x MXene function as an active photosensitive material rather than merely an electrode? Can a flexible, self-powered photodetector based entirely on 2D and 1D photoactive materials overcome the persistent challenge of high dark current that often limits low-light detection? Addressing these questions, we report a flexible self-driven photodetector constructed from a 2D Ti3C2T x MXene and a 1D CdS nanobelt heterojunction, where both constituents actively contribute to low-light detection. Unlike conventional approaches where MXene serves as a passive electrode, Ti3C2T x here plays an active role in photogeneration and charge separation. The 2D-1D architecture facilitates the formation of a strong built-in electric field across the interface, promoting efficient photocarrier extraction while significantly suppressing dark current. The device achieves an exceptional light-to-dark current ratio exceeding approximate to 105, a high responsivity of approximate to 34.42 A/W, and detectivity up to approximate to 5.68 x 1014 Jones, along with a rapid response time of approximate to 7.2/120 mu s under zero bias. These results highlight the potential of MXene-based heterostructures in advancing high-performance, low-light, self-powered optoelectronic platforms.
引用
收藏
页码:11015 / 11025
页数:11
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