Current mechanism and interface states in Ga2O3 MSM solar-blind photodetector

被引：0

作者：

Sun, Ruoting ^{[1
]}

Xu, Hao ^{[1
]}

He, Xiyao ^{[1
]}

Xu, Xiangyu ^{[2
]}

Du, Song ^{[1
]}

Zhang, Kelvin Hongliang ^{[2
]}

Long, Hao ^{[1
]}

机构：

[1] Xiamen Univ, Natl Model Microelect Coll, Sch Elect Sci & Engn, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China

来源：

SURFACES AND INTERFACES | 2025年 / 72卷

基金：

中国国家自然科学基金;

关键词：

Photocurrent; Solar-blind photodetector; Transport mechanisms; POOLE-FRENKEL;

D O I：

10.1016/j.surfin.2025.106949

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The (3-Ga2O3 metal-semiconductor-metal (MSM) solar-blind photodetectors (PDs) have been widely reported due to their simple preparation and low dark current, and have presented significant potential in the field of UVC photodetection under severe temperature environments. The properties of Ga2O3 MSM-PDs were closely related to the interfacial traps. However, the carrier mechanism, the role of interfacial traps and the transient process between dark and UV irradiation have not been fully revealed. In this work, the temperature-dependent I-V and It curves, and frequency-dependent C-V curves were utilized to investigate the intrinsic carrier transport mechanism. It was found that the reverse dark current was dominated by Poole-Frenkel (PF) emission with trap depth of 0.58 eV at Metal/Semiconductor interface, whose density increased and capture/emission time decreased with temperature. Under UVC light illumination, thermionic emission (TE) with Gaussian distribution of inhomogeneous Schottky barrier height (SBH) dominated the carrier transportation process. The elevation of effective SBH declined photocurrent at high temperatures. The capture and emission of carriers in traps determined the switching between TE and PF mechanisms upon the UVC illumination ON and OFF. Our work provides a fundamental current mechanism for better understanding Ga2O3-based MSM PDs.

引用

页数：9

共 55 条

[1] Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures [J].

Arslan, Engin ;

Butun, Serkan ;

Ozbay, Ekmel .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

[2] Evaluation of Schottky contact parameters in metal-semiconductor-metal photodiode structures [J].

Averine, S ;

Chan, YC ;

Lam, YL .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :274-276

[3] Ultralow dark current and high specific detectivity of Ga2O3-based solar-blind photodetector arrays realized via post-annealing in oxygen plasma [J].

Bao, Lingjie ;

Liang, Zheng ;

Kuang, Siliang ;

Xiao, Bohan ;

Zhang, Kelvin H. L. ;

Xu, Xiangyu ;

Cheng, Qijin .

JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (37) :14876-14886

[4] Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors via Interdigitated Structure [J].

Cai, Ziling ;

He, Xiyao ;

Wang, Kaikai ;

Hou, Xin ;

Mei, Yang ;

Ying, Leiying ;

Zhang, Baoping ;

Long, Hao .

SMALL METHODS, 2024, 8 (07)

[5] Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals [J].

Chen, Xuanhu ;

Mu, Wenxiang ;

Xu, Yang ;

Fu, Bo ;

Jia, Zhitai ;

Ren, Fang-Fang ;

Gu, Shulin ;

Zhang, Rong ;

Zheng, Youdou ;

Tao, Xutang ;

Ye, Jiandong .

ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (07) :7131-7137

[6] A Review on Conduction Mechanisms in Dielectric Films [J].

Chiu, Fu-Chien .

ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2014, 2014

[7] Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios [J].

Cui, Mei ;

Xu, Yang ;

Sun, Xinyu ;

Wang, Zhengpeng ;

Gong, Hehe ;

Chen, Xuanhu ;

Hu, Tiancheng ;

Zhang, Yijun ;

Ren, Fang-fang ;

Gu, Shulin ;

Ye, Jiandong ;

Zhang, Rong .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (39)

[8] Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes [J].

Fu, Kai ;

Fu, Houqiang ;

Huang, Xuanqi ;

Yang, Tsung-Han ;

Cheng, Chi-Yin ;

Peri, Prudhvi Ram ;

Chen, Hong ;

Montes, Jossue ;

Yang, Chen ;

Zhou, Jingan ;

Deng, Xuguang ;

Qi, Xin ;

Smith, David J. ;

Goodnick, Stephen M. ;

Zhao, Yuji .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (01) :74-83

[9] Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors [J].

Gu, Yan ;

Yang, Guofeng ;

Danner, Aaron ;

Yan, Dawei ;

Lu, Naiyan ;

Zhang, Xiumei ;

Xie, Feng ;

Wang, Yueke ;

Hua, Bin ;

Ni, Xianfeng ;

Fan, Qian ;

Gu, Xing ;

Chen, Guoqing .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (01) :160-165

[10] Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors [J].

Guo, D. Y. ;

Wu, Z. P. ;

An, Y. H. ;

Guo, X. C. ;

Chu, X. L. ;

Sun, C. L. ;

Li, L. H. ;

Li, P. G. ;

Tang, W. H. .

APPLIED PHYSICS LETTERS, 2014, 105 (02)

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