Carrier concentration dependence of optical and magnetic properties in epitaxial manganese-doped indium tin oxide films with different manganese concentrations

被引：0

作者：

Kitagawa, Saiki ^{[1
,2
,3
]}

Nakamura, Toshihiro ^{[1
,2
]}

机构：

[1] Division of Materials Science, Graduate School of Human and Environmental Studies, Kyoto University, Yoshida Nihonmatsu-cho, Sakyo-ku, Kyoto

[2] Department of Chemistry, Institute for Liberal Arts and Sciences, Kyoto University, Yoshida Nihonmatsu-cho, Sakyo-ku, Kyoto

[3] Japan Society for the Promotion of Science, Chiyoda-ku, Tokyo

来源：

Current Applied Physics | 2025年 / 69卷

基金：

日本学术振兴会;

关键词：

Carrier concentration; Diluted magnetic semiconductor; Epitaxial growth; Hole doping; Indium tin oxide; Transparent conducting film;

D O I：

10.1016/j.cap.2024.11.008

中图分类号：

学科分类号：

摘要：

Epitaxial manganese-doped indium tin oxide (Mn-doped ITO) films with different Mn concentrations were deposited on single-crystal yttria-stabilized zirconia substrates using radio-frequency magnetron sputtering. The carrier concentration of the epitaxial Mn-doped ITO films could be controlled by changing the Mn doping concentration. The optical bandgaps of the films increased with the increase in the carrier concentration. Room-temperature ferromagnetism was observed in all films irrespective of the Mn concentration. The saturation magnetizations of the films increased with the increase in the carrier concentration, which suggests that delocalized charge carrier-mediated interaction model is one of the most probable mechanisms of the ferromagnetism in the Mn-doped ITO films. We found that the carrier concentration plays a crucial role in controlling optical and magnetic properties of the Mn-doped ITO films. The results of this study provide useful insight into the application of Mn-doped ITO films to ferromagnetic electrodes in spintronic devices. © 2024 Korean Physical Society

引用

页码：60 / 69

页数：9

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