Erosion behaviors of silicon carbide at micro-nano scales under atomic oxygen exposure

被引：0

作者：

Ren, Hao ^{[1
]}

Qiu, Yisong ^{[1
]}

Zhou, Qiang ^{[2
]}

Ye, Hongfei ^{[1
]}

Han, Haiying ^{[2
]}

Zheng, Yonggang ^{[1
]}

机构：

[1] Dalian Univ Technol, State Key Lab Struct Anal Optimizat & CAE Software, Sch Mech & Aerosp Engn, Dept Engn Mech, Dalian 116024, Peoples R China

[2] Beijing Inst Spacecraft Syst Engn, Beijing 100094, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2025年 / 13卷 / 28期

基金：

国家重点研发计划;

关键词：

REACTIVE MOLECULAR-DYNAMICS; HIGH-TEMPERATURE OXIDATION; FORCE-FIELD; PASSIVE TRANSITION; ACTIVE OXIDATION; REAXFF; SIMULATION; IMPACT; DISINTEGRATION; COMPOSITE;

D O I：

10.1039/d5ta01613d

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reactive molecular dynamics (RMD) methods are employed to investigate the interface evolution and oxidative erosion behavior of silicon carbide (SiC) under extreme atomic oxygen (AO) impact (high energy and flux). The degree of AO concentration at the surface is found to be a key factor regulating AO-induced oxidation behavior, while temperature plays a decisive role in driving transitions between erosion stages. High-flux AO impact increases the transition temperature of passive-to-active oxidation stage. The addition of a thermostat enhances SiC's resistance to AO erosion. Si-surface materials exhibit superior penetration resistance, oxidation resistance, and thermal protective properties under extreme AO impact conditions.

引用

页码：22946 / 22961

页数：16

共 61 条

[1] ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SIC [J].