The structural, mechanical, electronic, and thermodynamic properties of Cu-doped SnTe studied by first-principles calculations

被引:0
作者
Gao, Q. N. [1 ]
Zhang, H. L. [1 ]
Dong, Z. H. [1 ]
Liu, Y. J. [2 ]
Zhou, N. N. [1 ]
Zhang, P. P. [1 ]
Wang, J. [3 ]
机构
[1] Hebei Petr Univ Technol, Dept Math & Phys, Chengde 067500, Hebei, Peoples R China
[2] Hebei Petr Univ Technol, Dept Admiss & Employment, Chengde 067500, Hebei, Peoples R China
[3] Cent South Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China
来源
CHALCOGENIDE LETTERS | 2025年 / 22卷 / 03期
基金
中国国家自然科学基金;
关键词
SnTe; Electronic properties; Mechanical properties; Thermodynamic properties; THERMAL-PROPERTIES; AB-INITIO; CONSTANTS; PHONON;
D O I
10.15251/CL.2025.223.205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structural, mechanical, electronic, and thermodynamic properties of CuxSn1-xTe (x = 0, 0.03125, 0.0625, 0.125, and 0.25) are investigated through first-principles calculations. The studied structures are all cubic and own negative enthalpy of formation. The elastic constants and mechanical properties (B, G, E and nu) are predicted. The bandgap of SnTe evaluated by HSE06 is 0.25 eV, closing to the experimental data 0.19 eV. All studied Cu-doped compounds behave metallic. In addition, the thermodynamic properties (G, H, S, CP, and CV) of the materials, together with the bulk modulus and thermal expansion coefficient versus temperature have been evaluated.
引用
收藏
页码:205 / 221
页数:17
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