Hot press sintering of Bi-Zn-In-Sn doped yttrium iron garnet ferrite: Magnetism, ferromagnetic resonance linewidth and dielectric properties

被引:3
作者
Yang, Wencheng [1 ]
Qian, Yangyang [1 ]
Zheng, Hui [1 ]
机构
[1] Hangzhou Dianzi Univ, Dept Elect Sci & Technol, Lab Nanoelect & NanoDevices, Hangzhou 310018, Peoples R China
关键词
Hot-pressing method; Yttrium iron garnet; Low temperature sintering; Ferrite; Dielectric properties; Magnetic properties; FMR linewidth; FMR LINEWIDTH; YIG FERRITE; SUBSTITUTION; MICROSTRUCTURE;
D O I
10.1016/j.ceramint.2025.03.067
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The demand for low-loss microwave devices and the need for low temperature co-firing with silver electrodes have driven the rapid development of low temperature co-firing technology. YIG samples were co-substituted with Bi-Zn-Sn-In at a pressure of 20 MPa and a temperature of 900 degrees C in hot press furnace, followed by solid-phase reaction synthesis of Y3-xBixFe4.35In0.45Zn0.1Sn0.1O12 (x = 0.7, 0.75, 0.8, 0.85). The addition of Bi2O3 effectively lowered the activation energy of the reaction, enabling sintering to occur below 961 degrees C. Meanwhile, the inclusion of Sn4+ and In3+ significantly reduced the anisotropic broadening (Delta Ha). Hot press sintering yielded samples with high density and minimal porosity, leading to a substantial reduction in pore broadening (Delta Hp). Notably, when Bi3+ substitution x = 0.7, the F MR linewidth was reduced to 85 Oe (Delta Hp = 46.72 Oe, Delta Ha = 38.27 Oe), demonstrating excellent material properties under low temperature sintering conditions.
引用
收藏
页码:23779 / 23787
页数:9
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