Radiation-Enhanced Multi-Level Cell Behavior in TaOx/NiO-based Resistive Random Access Memory

被引：0

作者：

Sari, Jesslyn Kartika ^{[1
]}

Huang, Chien-Yuan ^{[1
]}

Chung, Chin-Han ^{[1
]}

机构：

[1] Natl Ming Chiao Tung Univ, Int Coll Semicond Technol ICST, Hsinchu 30010, Taiwan

来源：

2023 23RD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS | 2023年

关键词：

Resistive random access memory; total ionizing dose; multi-level cell; reliability; radiation effect;

D O I：

10.1109/RADECS59069.2023.10767028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As a non-volatile memory (NVM), resistive random-access memory (RRAM) has been considered as one of the promising emerging devices to emulate the synaptic behavior and accelerate the computation of intelligent algorithms. In addition, compared to conventional NVMs, RRAM has the advantage of higher radiation tolerance and application prospects in space. In this work, the radiation effects on bilayer dielectric TaOx/NiO-based RRAM using Co-60 gamma-ray were investigated. Devices were irradiated up to a dose of 400 krad (Si) and exhibited changes in characteristics which might be caused by the increase of oxygen vacancies within the dielectric layers as a result of irradiation. The irradiated device also displayed an enhanced multi-level cell (MLC) behavior controllable under lower compliance currents, compared to pristine devices.

引用

页数：5

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