Galvanic Corrosion Effect of Co Liner on ALD TaN Barrier

被引：2

作者：

Jang, Junki ^{[1
]}

Kim, Changhyun ^{[1
]}

Yoon, Youngsoo ^{[1
]}

Choi, Yunki ^{[1
]}

Kim, Hoon ^{[1
]}

Park, Jungil ^{[1
]}

Park, Jaehyeong ^{[1
]}

Kang, Minguk ^{[1
]}

Kim, Youngwoo ^{[1
]}

Jang, Seonguk ^{[1
]}

Ahn, Junghwan ^{[1
]}

Park, Eunyoung ^{[1
]}

Jeong, Wonmin ^{[1
]}

Kim, Jeongjae ^{[1
]}

Oh, Minhyuk ^{[1
]}

Han, Wonkyu ^{[1
]}

Shin, Dongwoo ^{[1
]}

Kim, Wookhwan ^{[1
]}

Yang, Jaeyoung ^{[1
]}

Park, Honglae ^{[1
]}

Kwon, Segab ^{[1
]}

Ahn, Jeonghoon ^{[1
]}

Ku, Jahum ^{[1
]}

机构：

[1] Samsung Elect Inc, Foundry Business, Hwasung, Gyeonggi, South Korea

来源：

2022 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC | 2022年

关键词：

Cu; ALD TaN; PVD TaN; INTERCONNECTS;

D O I：

10.1109/IITC52079.2022.9881307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes strong galvanic corrosion effect of Co liner on atomic layer deposition (ALD) TaN barrier during Cu CMP. Compared to Co liner on physical vapor deposition (PVD) TaN, Co liner on ALD TaN was more easily corroded resulting in Cu void defects. We investigated characteristic differences between ALD and PVD TaN, and identified the root cause of Cu void formation is higher nitrogen content in ALD TaN film. We could minimize the galvanic corrosion and the resulting Cu voids by reinforcing plasma treatments after ALD TaN deposition.

引用

页码：51 / 53

页数：3

共 9 条

[1]

[Anonymous], 2007, Electrochemical and Solid State Letters, V10, pH127

[2] Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition [J].

Furuya, A ;

Tsuda, H ;

Ogawa, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :979-983

[3] Electrochemical study on metal corrosion in chemical mechanical planarization process [J].

Kondo, Seiichi ;

Ichige, Yasuhiro ;

Otsuka, Yuya .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (07)

[4] Discrete Study of ALD TaN on Via and Line for Low Resistive and High Reliable Cu/Low-k Interconnects and Other Applications [J].

Motoyama, K. ;

Fujii, K. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (06) :P303-P309

[5]

Nogami T., 2013, 2013 IEEE International Interconnect Technology Conference-IITC, P1, DOI [10.1109/IITC.2013.6615592, DOI 10.1109/IITC.2013.6615592]

[6]

Nogami T, 2019, 2019 ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE, EDTM 2019, P38, DOI 10.1109/EDTM.2019.8731225

[7] ALD and PVD Tantalum Nitride Barrier Resistivity and Their Significance in Via Resistance Trends [J].

van der Straten, O. ;

Zhang, X. ;

Motoyama, K. ;

Penny, C. ;

Maniscalco, J. ;

Knupp, S. .

ATOMIC LAYER DEPOSITION APPLICATIONS 10, 2014, 64 (09) :117-122

[8]

Wu ZY, 2018, IEEE INT INTERC TECH, P149, DOI 10.1109/IITC.2018.8430433

[9]

Yoon Y., 2021, 2021 IEEE INT INT TE, P1

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