METAL-SEMICONDUCTOR DOMAIN CONFIGURATIONS DURING SWITCHING OF VO-2 SINGLE-CRYSTALS

被引:25
作者
FISHER, B [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 07期
关键词
D O I
10.1088/0022-3719/9/7/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1201 / 1209
页数:9
相关论文
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[2]   ANISOTROPY IN ELECTRICAL RESISTIVITY OF VANADIUM DIOXIDE SINGLE CRYSTALS [J].
EVERHART, CR ;
MACCHESNEY, JB .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2872-+
[3]   MOVING BOUNDARIES AND TRAVELING DOMAINS DURING SWITCHING OF VO2 SINGLE-CRYSTALS [J].
FISHER, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (13) :2072-&
[4]  
RAIKHTSAUM GA, 1973, SOV PHYS SEMICOND+, V6, P1906