Influence of Gd doping on Cu2Sn1-xGdxS3 thin film solar cell

被引:0
作者
Baturay, Silan [1 ]
Gezgin, Serap Yigit [2 ]
Koylu, M. Zafer [1 ]
Kabatas, Mohamed A. Basyooni-M. [3 ,4 ,5 ]
Kilic, Hamdi Sukur [6 ]
机构
[1] Dicle Univ, Fac Sci, Dept Phys, TR-21280 Diyarbakir, Turkiye
[2] Selcuk Univ, Fac Sci, Dept Phys, TR-42031 Selcuklu, Konya, Turkiye
[3] Delft Univ Technol, Dept Precis & Microsyst Engn, Dynam Micro & Nano Syst Grp, Mekelweg 2, NL-2628 CD Delft, Netherlands
[4] Selcuk Univ, Grad Sch Appl & Nat Sci, Dept Nanotechnol & Adv Mat, TR-42030 Konya, Turkiye
[5] Natl Res Inst Astron & Geophys, Solar & Space Res Dept, Solar Res Lab, Cairo 11421, Egypt
[6] Univ Dokuz Eylul, Fac Engn, Dept Met & Mat Engn, Izmir, Turkiye
关键词
NUMERICAL-SIMULATION APPROACH; PERFORMANCE; EFFICIENCY; FABRICATION; HETEROJUNCTION; SULFURIZATION; ENHANCEMENT; DEPOSITION; LAYER;
D O I
10.1016/j.isci.2025.112597
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The effect of the Gd/Sn composition ratio of Cu2Sn1-xGdxS3 is examined. The films are fabricated on glass substrates in a sulfur atmosphere via the spin coating. The influence of the Gd/Sn composition ratio on the structural, morphological, optical, and electrical properties of the films is investigated using X-ray diffraction, FESEM, UV-Vis, and Hall effect. XRD patterns for the films revealed that all films have a monoclinic polycrystalline. The morphological and optical properties of the films show the formation of spherical grains and polygonal structures with an energy band in the range of 2.10-1.50 eV. The electrical properties of the films are changed by increasing the Gd/Sn composition ratio in the film. Furthermore, the Cu2Sn1-xGdxS3/CdS heterojunction solar cell was modeled by SCAPS-1D. The optimized conditions yielded exceptional photovoltaic parameters, achieving an open-circuit voltage of 0.7885 V, short circuit current density of 41.09 mA/cm2, fill factor of 85.30%, and an efficiency of 27.3%.
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页数:24
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