Effect of inner crucible structure on oxygen transport and distribution in the continuous-feeding Czochralski growth of silicon crystal

被引:0
作者
Li, Dengnian [1 ]
Wang, Changzhen [1 ]
Qi, Chao [1 ]
Li, Jiancheng [1 ]
Zhong, Zeqi [1 ]
Yang, Yao [1 ]
Li, Zaoyang [1 ]
Liu, Lijun [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
关键词
A1. Mass transfer; A1. Oxygen impurities; A1. Computer simulation; A2. Single crystal growth; A2. Double crucible technique; LITHIUM-NIOBATE; MELT; INGOTS;
D O I
10.1016/j.jcrysgro.2025.128278
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Oxygen is one of the critical impurities in silicon crystal. Excessive oxygen leads to increased defects and reduced efficiency of solar cells. Therefore, reducing oxygen concentration is a key issue in silicon crystal. In this study, a global 2D model for the continuous-feeding Czochralski silicon crystal growth was established, considering the complex shapes of the corner and bottom of inner crucible, instead of using the simplification of cylindrical partition. Based on the model, numerical simulations were performed to investigate the effects of inner crucible diameter, corner shape, and bottom shape on flow, heat transfer and oxygen transport. The results indicate that the structure of inner crucible significantly affects the oxygen transport. With the decrease of inner crucible diameter, the oxygen at crystallization interface increases; with the increase of curvature radius of inner crucible corner, the oxygen at crystallization interface decreases; with the increase of curvature radius of inner crucible bottom, the oxygen at crystallization interface increases. The findings can provide guidance for the optimization of inner crucible structure for reducing oxygen concentration.
引用
收藏
页数:10
相关论文
共 25 条
[1]   NUMERICAL AND EXPERIMENTAL-STUDY OF A SOLID PELLET FEED CONTINUOUS CZOCHRALSKI GROWTH-PROCESS FOR SILICON SINGLE-CRYSTALS [J].
ANSELMO, A ;
PRASAD, V ;
KOZIOL, J ;
GUPTA, KP .
JOURNAL OF CRYSTAL GROWTH, 1993, 131 (1-2) :247-264
[2]   Engineering insights into heater design for oxygen reduction in CZ silicon growth [J].
Dezfoli, Amir Reza Ansari .
CASE STUDIES IN THERMAL ENGINEERING, 2025, 65
[3]   Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth [J].
Dezfoli, Amir Reza Ansari ;
Adabavazeh, Zary .
HELIYON, 2024, 10 (08)
[4]   Enhancement of heat transfer in Czochralski growth of silicon crystals with a chemical cooling technique [J].
Ding, Junling ;
Liu, Lijun ;
Zhao, Wenhan .
JOURNAL OF CRYSTAL GROWTH, 2017, 468 :894-898
[5]   Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production [J].
Kim, Kwanghun ;
Park, Sanghyun ;
Park, Jaechang ;
Pang, Ilsun ;
Ryu, Sangwoo ;
Oh, Jihun .
ELECTRONIC MATERIALS LETTERS, 2018, 14 (04) :461-466
[6]   Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique [J].
Kitashima, T ;
Liu, LJ ;
Kitamura, K ;
Kakimoto, K .
JOURNAL OF CRYSTAL GROWTH, 2004, 266 (1-3) :109-116
[7]   Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique [J].
Kitashima, T ;
Liu, LJ ;
Kitamura, K ;
Kakimoto, K .
JOURNAL OF CRYSTAL GROWTH, 2004, 267 (3-4) :574-582
[8]   Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method [J].
Li, Jiacheng ;
Lv, Xuekang ;
Hu, Rongrong ;
Ali, Salamat ;
Li, Gengjin ;
Qi, Jing ;
He, Deyan .
SILICON, 2025, 17 (01) :51-62
[9]   A novel approach to reduce the oxygen content in monocrystalline silicon by Czochralski method [J].
Li, Jiancheng ;
Wang, Junlei ;
Liu, Lijun ;
Wen, Yong ;
Wang, Changzhen .
JOURNAL OF CRYSTAL GROWTH, 2024, 630
[10]   Effects of melt depth on oxygen transport in silicon crystal growth by continuous-feeding Czochralski method [J].
Li, Jiancheng ;
Li, Zaoyang ;
Liu, Lijun ;
Wang, Changzhen ;
Jin, Yuqi .
JOURNAL OF CRYSTAL GROWTH, 2023, 610