Synthesis of Co-Doped In2O3 Hierarchical Porous Nanocubes for High-Performance Hydrogen Sulfide Sensors

被引:0
作者
Wang, Xiaohua [1 ,2 ]
Li, Yanwei [1 ,3 ]
Sun, Guang [1 ,3 ]
Cao, Jianliang [1 ]
Wang, Yan [3 ]
机构
[1] Henan Polytech Univ, Sch Chem & Chem Engn, Jiaozuo 454000, Peoples R China
[2] Jiaozuo Univ, Sch Chem Engn & Environm Engn, Jiaozuo 454000, Peoples R China
[3] Henan Polytech Univ, Collaborat Innovat Ctr Coal Safety Prod Henan Prov, Jiaozuo 454000, Peoples R China
基金
中国国家自然科学基金;
关键词
H2S GAS SENSOR; HYDROTHERMAL SYNTHESIS; SENSING PROPERTIES; FACILE SYNTHESIS; FAST-RESPONSE; OXIDE; ALPHA-FE2O3; MECHANISM; NANOSTRUCTURES; MICROSPHERES;
D O I
10.1021/acs.langmuir.5c01131
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recently, because of the urgent need for safety and health protection, there has been a growing focus on exploring effective and feasible gas sensors based on metal oxide semiconductors (MOSs) for detecting trace levels of hydrogen sulfide (H2S). In this context, a cobalt (Co) doping strategy was proposed to improve the H2S-sensitive properties of In2O3 nanomaterials, enabling them to monitor 1 ppm of H2S at a relatively lower temperature. The Co-doped In2O3 hierarchical porous nanocubes (Co-In2O3 HPNCs) were prepared through a hydrothermal route using In(OH)3 as a precursor. When utilized as a sensing material to detect H2S, the Co-In2O3 HPNCs demonstrated significant enhancements compared to pure In2O3. These enhancements include a reduction in the operating temperature (260 vs 300 degrees C), a significant increase in response (36.99 vs 12.28 for 20 ppm of H2S), and better selectivity (13.21 vs 3.07 times to ethanol). Even to 1 ppm of H2S, the Co-In2O3 sensor can give a response value of 1.86, highlighting its substantial potential for detecting H2S at the limit of detection (LOD) of 1 ppm. A detailed analysis of the multiple sensitization effects of Co doping reveals that these improved H2S sensing characteristics of Co-In2O3 HPNCs can be primarily traced back to three factors, namely, an increased oxygen vacancy concentration, a narrowing of the bandgap, and an upward shift of the Fermi level.
引用
收藏
页码:14185 / 14196
页数:12
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