Advances in silicon photonics with quantum dot lasers

More than forty years ago, in 1982, we proposed the concept of quantum dot lasers and at the same time theoretically predicted the temperature insensitivity of the threshold current. With advances in growth technology, the predicted characteristics were demonstrated in 2004, and high-temperature operation up to 220 degrees C became possible in 2011. Currently, quantum dot lasers are positioned as a promising light source for silicon photonics, especially in terms of their ability to operate at high temperatures in co-packaged optical technology. In this talk, I will describe the historical development of quantum dot lasers and their integration into 5 mm square silicon-based transceiver chips, as well as the direct epitaxial growth of quantum lasers on silicon. The talk will also demonstrate the integration of quantum dot-based light sources, including singlephoton sources, on silicon integrated circuits using transfer printing methods.