Ka-Band On-Chip Broad Stopband Bandpass Filters Based on GaN-on-Silicon

被引：0

作者：

Wang, Hong ^{[1
,2
]}

Xing, Yiming ^{[1
]}

Guan, Guanghao ^{[1
]}

Wang, Weiyuan ^{[3
]}

Liu, Xiaoyi ^{[3
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Phys & Optoelect, Guangzhou 510640, Peoples R China

[2] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China

[3] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2025年

关键词：

Band-pass filters; Resonators; System-on-chip; Resonator filters; Microwave filters; Bandwidth; Resonant frequency; Q-factor; Coplanar waveguides; Feeds; Bandpass filter (BPF); broad stopband; coplanar waveguide (CPW); GaN-on-Silicon; on-chip; COMPACT;

D O I：

10.1109/LMWT.2025.3566030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a broad stopband on-chip bandpass filter (BPF) based on GaN-on-Silicon. The filter extends the ground plane between the resonators, and a U-shaped feed to form a band stop, which forms a transmission zero at the upper frequency for faster attenuation. The measurements show that the filter has a broad stopband with S(21 )less than-15 dB from30.4 to 110 GHz. The 3 dB bandwidth is 12.1%, and the S21bandwidth greater than-15 dB is 23.7%. The quality factor is 33.7 which is higher than the existing literature. This proposed filter has a good stopband attenuation rate with 0.087 x 0.103 lambda(g2)(0.662 x 0.814 mm(2)) chip area.

引用

页数：4

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