Optical conductance and polarization of the monolayer graphene in the presence of Rashba spin orbit interaction and electromagnetic wave

被引:0
作者
Naifar, A. [1 ,2 ]
Duque, C. A. [3 ]
Hasanirokh, K. [4 ]
机构
[1] IPEIK Univ Kairouan, Preparatory Inst Engn Studies Kairouan, Kairouan, Tunisia
[2] Univ Kairouan, Dept Phys, Lab Chem Mat & Modelling LR24ES02, Kairouan, Tunisia
[3] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Grp Mat Condensada UdeA, Inst Fis, Medellin, Colombia
[4] Univ Tabriz, Res Inst Appl Phys & Astron, Tabriz 51665163, Iran
关键词
Graphene; Rashba spin orbit coupling; Inter and intra conductivity; Transport coefficient; MECHANICAL-PROPERTIES; CONDUCTIVITY; QUANTUM; GENERATION;
D O I
10.1016/j.physb.2025.417495
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present a theoretical investigation of the optical conductivity of graphene layer in the presence of Rashba spin-orbit coupling (SOC). By employing the massless Dirac description, we evaluate the combined impacts of the Rashba strength and chemical potential on the inter and intra conductivity within the sample. Our numerical findings revealed that the conductivity and polarization are highly sensitive to these pivotal highlighted parameters. Real and imaginary parts of both spin-dependent optical conductivity sigma intra and sigma inter behave differently with respect to the relevant managing factors and could be fine-tuned to advance spintronics. The imaginary parts exhibited strong sensitivity to changes in both lambda and mu. Moreover, the dynamic response of the inspected system, particularly in terms of energy absorption and dissipation, is heavily influenced by the modulation of (lambda, mu) pair. More importantly, the computational outcomes evidenced that the optical characteristics of this system differ significantly from those of a graphene layer due to the Rashba coupling incorporation. Spin-dependent optical conductivity can unlock new functionalities and enhance the performance of graphene in both spinbased electronics and light-based technologies, offering promising pathways for next-generation devices.
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页数:11
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