A 27 GHz GaN MMIC Doherty Power Amplifier with Optimized Driver Stages

被引：0

作者：

Kraemer, Robert ^{[1
]}

Seidel, Andres ^{[1
]}

Neininger, Philipp ^{[2
]}

Wagner, Jens ^{[1
,3
]}

Ellinger, Frank ^{[1
,3
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, Dresden, Germany

[2] Fraunhofer Inst Appl Solid State Phys IAF, Freiburg, Germany

[3] Ctr Tactile Internet Human Loop CeTI, Dresden, Germany

来源：

2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024 | 2024年

关键词：

Doherty; GaN; MMIC; power amplifier; wireless communication;

D O I：

10.23919/EuMIC61603.2024.10732086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a 26.5 GHz to 29GHz GaN MMIC Doherty power amplifier concept with two stages per path is investigated in a 150nm GaN HEMT MMIC technology. Prior to the design the placement of driver stages in Doherty amplifiers is studied and their influence on the system efficiency is evaluated. One of the key findings is that a gain in the second stage of 15 dB assures a degradation on system drain efficiency of less than 5% in comparison to the single stage efficiency of the second stage. The fabricated GaN Doherty amplifier exhibits a maximum power added efficiency of 35% and maximum backoff efficiency of 24% at 8 dB backoff while maintaining a saturated output power of 30.4 dBm.

引用

页码：162 / 165

页数：4

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