A 1-8-GHz Direct-Conversion Receiver Front End in 45-nm CMOS SOI for 5G Wireless Applications

被引：0

作者：

Liu, Xuzhi ^{[1
]}

Chen, Zhiming ^{[1
]}

Wang, Yingze ^{[1
]}

Han, Fang ^{[2
]}

Qi, Quanwen ^{[2
]}

Liu, Zicheng ^{[3
]}

机构：

[1] Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing, Peoples R China

[2] Beijing Inst Technol, Acad Yangtze Delta Reg, Jiaxing, Peoples R China

[3] Beijing Inst Technol, Chongqing Inst Microelect & Microsyst, Chongqing, Peoples R China

来源：

2024 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE, APMC | 2024年

关键词：

5G; CMOS; direct-conversion; IMD2; cancellation; wideband receiver;

D O I：

10.1109/APMC60911.2024.10867675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1-8 GHz direct-conversion receiver front end designed for the 5G NR wireless communication is presented. An architecture with an alternating arrangement of attenuators and amplifiers extends the channel bandwidth and achieves a gain adjustment range exceeding 40 dB. Noise-canceling low noise amplifier (LNA), windmill frequency divider, and other key modules are discussed in detail. The receiver is fabricated in a 45-nm CMOS SOI, and the measurement results validate our design.

引用

页码：838 / 840

页数：3

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