Copper Oxidation-Induced Nanoscale Deformation of Electromechanical, Laminate Polymer/Graphene Thin Films during Thermal Annealing: Implications for Flexible, Transparent, and Conductive Electrodes

被引:1
作者
Croft, Zacary L. [1 ]
Valenzuela, Oscar [1 ]
Thompson, Connor [1 ]
Whitfield, Brendan [1 ]
Betzko, Garrett [2 ]
Liu, Guoliang [1 ,2 ,3 ,4 ]
机构
[1] Virginia Tech, Dept Chem, Blacksburg, VA 24061 USA
[2] Virginia Tech, Acad Integrated Sci, Div Nanosci, Blacksburg, VA 24061 USA
[3] Virginia Tech, Macromol Innovat Inst, Blacksburg, VA 24061 USA
[4] Virginia Tech, Dept Chem Engn, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
基金
美国国家科学基金会;
关键词
polymer/graphene; thin films; thermal annealing; oxidation; deformation; mechanics; ELECTRICAL-PROPERTIES; POLYMER-FILMS; GRAPHENE; NANOCOMPOSITES; MECHANICS; STRESS; CU;
D O I
10.1021/acsanm.4c06372
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The transfer of large-area, continuous, chemical vapor deposition (CVD)-grown graphene without introducing defects remains a challenge for fabricating graphene-based electronics. Polymer thin films are commonly used as supports for transferring graphene, but they typically require thermal annealing before transfer. However, little work has been done to thoroughly investigate how thermal annealing affects the polymer/graphene thin film when directly annealed on the growth substrate. In this work, we demonstrate that under improper annealing conditions, thermal annealing of poly(ether imide)/single-layer graphene (PEI/SLG) thin films on Cu causes detrimental nanoscale structural deformations, which permanently degrade the mechanical properties. Furthermore, we elucidate the mechanisms of PEI/SLG deformation during thermal annealing and find that permanent deformations and cracking are caused by Cu substrate oxidation. This study provides an understanding of annealing-induced deformation in polymer/graphene thin films. We anticipate that this knowledge will be useful for further developing defect-free, graphene-based thin film electronics.
引用
收藏
页码:28829 / 28840
页数:12
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