Emissive Chalcogenide Perovskite Nanowires

被引:0
作者
Jiang, Yuxin [1 ,2 ,3 ]
Le, Han K. D. [1 ,2 ]
Verbitsky, Lior [1 ,2 ]
DeVyldere, Hannah [4 ]
Oddo, Alexander M. [1 ,2 ]
Pan, Bruce [1 ]
Song, Hee-geun [4 ]
Zhu, Cheng [2 ,4 ]
Zhu, Heqing [1 ,2 ]
Scott, Mary C. [4 ,5 ]
Yang, Peidong [1 ,2 ,3 ,4 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[3] Kavli Energy Nano Sci Inst, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[5] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Mol Foundry, Berkeley, CA 94720 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
chalcogenide perovskites; nanowire; chemicalvapor transport; photoluminescence; CHEMICAL-TRANSPORT; TEMPERATURE; TITANIUM; SULFUR; BAZRS3;
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Efficient and stable one-dimensional semiconductor nanowires are critical for the development of next-generation on-chip optoelectronics. Here, we report a synthetic approach to produce high-quality nanowires based on chalcogenide perovskite via a vapor phase reaction inside a sealed ampule. An epitaxial vapor-phase growth mechanism is proposed. The nanowires are shown to be single crystalline and highly structurally stable, with a preferential growth along the [010] direction. Red and green photoluminescence (PL) is observed from BaZrS3 and SrHfS3 nanowires, respectively, and the emission is shown to be tunable with varying compositions. PL lifetime is measured by fitting the decay curve with a biexponential model. The longer radiative recombination lifetime component is on the time scale of nanoseconds, indicating good nanowire sample quality with a promising potential for optoelectronic applications.
引用
收藏
页码:7029 / 7036
页数:8
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