A Comparative Analysis of Radiation Tolerance in Charge-Trap and Floating-Gate 3-D NAND Memory Technologies

被引：0

作者：

Kumar, Mondol Anik ^{[1
]}

Buddhanoy, Matchima ^{[1
]}

Ray, Biswajit ^{[1
]}

机构：

[1] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2025年 / 72卷 / 04期

基金：

美国国家科学基金会;

关键词：

Three-dimensional displays; Computer architecture; Radiation effects; Microprocessors; Logic gates; Encoding; Nonvolatile memory; Electron traps; Dielectrics; Transistors; 3-D NAND; charge-trap (CT); floating-gate (FG); total-ionizing-dose (TID); FLASH; CO-60;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we present a comparative investigation of total-ionizing-dose (TID) effects on 3-D floating-gate (FG) and charge-trap (CT) memory technologies. FG 64-layer 3-D NAND technology is found to be more sensitive to TID effects than CT 176-layer and 128-layer 3-D NAND chips under identical irradiation conditions. However, irradiated CT memory loses information substantially faster than FG counterparts during room-temperature retention. We explain the observed characteristics based on differences in fundamental cell geometry, discrete charge storage mechanism, and charge diffusion in trap-rich and continuous charge storage layers.

引用

页码：1077 / 1085

页数：9

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