Performance Improvement of Vertical Channel Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode

被引：0

作者：

Fu, Wanqiang ^{[1
]}

Chen, Qizhen ^{[1
]}

Gao, Peng ^{[2
,3
]}

Jiang, Linqin ^{[4
]}

Qiu, Yu ^{[4
]}

Wuu, Dong-Sing ^{[5
]}

Horng, Ray-Hua ^{[6
]}

Lien, Shui-Yang ^{[1
,7
]}

机构：

[1] Xiamen Univ Technol, Sch Optoelect & Commun Engn, Xiamen Key Lab Dev & Applicat Adv Semicond Coating, Xiamen 361024, Peoples R China

[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Peoples R China

[3] Chinese Acad Sci, Fujian Inst Res Struct Matter, Fujian Prov Key Lab Nanomat, Fuzhou 350002, Peoples R China

[4] Fujian Jiangxia Univ, Key Lab Green Perovskites Applicat Fujian Prov Uni, Fuzhou 350108, Peoples R China

[5] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan

[6] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[7] Da Yeh Univ, Dept Mat Sci & Engn, Dacun 51591, Taiwan

来源：

ENERGIES | 2025年 / 18卷 / 09期

基金：

中国国家自然科学基金;

关键词：

MXene; IGZO; vertical channel TFT; porous source electrode; flexible devices;

D O I：

10.3390/en18092331

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium-gallium-zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 x 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.

引用

页数：11

共 26 条

[1] Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited n-Ga-Zn-O [J].