Interfacial Ohmic contact engineering in MoSe2/Ti3C2 Heterostructures for high-performance sodium-ion capacitors

被引:0
作者
Xiao, Yuanhua [1 ]
Yuan, Gaozhan [1 ]
Su, Dangcheng [2 ]
Fan, Yuanyuan [1 ]
Wang, Haoshuang [1 ]
Ge, Xutao [1 ]
Zhou, Jun [1 ]
Fang, Shaoming [1 ]
Wang, Xuezhao [3 ]
机构
[1] Zhengzhou Univ Light Ind, Key Lab Surface & Interface Sci & Technol, Zhengzhou 455002, Peoples R China
[2] Luoyang Inst Sci & Technol, Sch Mat Sci & Engn, Henan Prov Int Joint Lab Mat Solar Energy Convers, Luoyang 471023, Peoples R China
[3] Zhengzhou Univ Technol, Coll Food & Chem, Zhengzhou 450044, Peoples R China
基金
中国博士后科学基金;
关键词
Sodium-ion capacitor; Ohmic contact; MoSe2; Heterostructures; NANOSHEETS; MOSE2;
D O I
10.1016/j.jelechem.2025.119181
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The development of sodium-ion capacitors (SICs) is hindered by the kinetic mismatch between sluggish ion diffusion in battery-type anodes and rapid surface reactions in capacitive cathodes. Herein, a MoSe2/Ti3C2 heterostructure with ohmic contact interfaces is synthesized via a facile solvothermal method, which simultaneously improve charge transfer kinetics and structural stability. Density functional theory (DFT) calculations reveal that the MoSe2/Ti3C2 interface reduces Na+ diffusion energy barriers while providing efficient electron transport pathways. Notably, the MoSe2/Ti3C2 heterostructure as a sodium-ion battery (SIB) anode delivers a high reversible capacity of 506.2 mAh g-1 at 0.1 A g-1 and retains a capacity of 314.2 mAh g-1 at 10.0 A g-1, demonstrating exceptional rate capability. When coupled with a commercial activated carbon (AC) cathode, the SIC device achieves energy densities of 101.3 Wh kg-1 at 297.8 W kg-1, retaining 26.1 Wh kg-1 even at 11.2 kW kg-1. Additionally, the device exhibits outstanding cycling stability with 97.5 % capacity retention after 5500 cycles. These results highlight the critical role of ohmic contact engineering in optimizing hybrid electrode design and provide a pathway for advancing high-performance SICs.
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页数:9
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