Memristive Ion Dynamics to Enable Biorealistic Computing

被引:1
作者
Zhao, Ruoyu [1 ]
Kim, Seung Ju [1 ]
Xu, Yichun [1 ]
Zhao, Jian [1 ]
Wang, Tong [1 ]
Midya, Rivu [2 ,3 ]
Ganguli, Sabyasachi [4 ]
Roy, Ajit K. [4 ]
Dubey, Madan [5 ]
Williams, R. Stanley [1 ]
Yang, J. Joshua [1 ]
机构
[1] Univ Southern Calif, Ming Hsieh Dept Elect & Comp Engn, Los Angeles, CA 90089 USA
[2] Sandia Natl Labs, Livermore, CA 94550 USA
[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[4] Air Force Res Lab Mat & Mfg Directorate Wright Pat, Dayton, OH 45433 USA
[5] US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20723 USA
基金
美国国家科学基金会;
关键词
ARTIFICIAL SYNAPSE; THRESHOLD SWITCH; CROSSBAR ARRAYS; NEURAL-NETWORKS; INTEGRATION; TRANSITION; MIGRATION; CLASSIFICATION; EXCITABILITY; CONDUCTANCE;
D O I
10.1021/acs.chemrev.4c00587
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Conventional artificial intelligence (AI) systems are facing bottlenecks due to the fundamental mismatches between AI models, which rely on parallel, in-memory, and dynamic computation, and traditional transistors, which have been designed and optimized for sequential logic operations. This calls for the development of novel computing units beyond transistors. Inspired by the high efficiency and adaptability of biological neural networks, computing systems mimicking the capabilities of biological structures are gaining more attention. Ion-based memristive devices (IMDs), owing to the intrinsic functional similarities to their biological counterparts, hold significant promise for implementing emerging neuromorphic learning and computing algorithms. In this article, we review the fundamental mechanisms of IMDs based on ion drift and diffusion to elucidate the origins of their diverse dynamics. We then examine how these mechanisms operate within different materials to enable IMDs with various types of switching behaviors, leading to a wide range of applications, from emulating biological components to realizing specialized computing requirements. Furthermore, we explore the potential for IMDs to be modified and tuned to achieve customized dynamics, which positions them as one of the most promising hardware candidates for executing bioinspired algorithms with unique specifications. Finally, we identify the challenges currently facing IMDs that hinder their widespread usage and highlight emerging research directions that could significantly benefit from incorporating IMDs.
引用
收藏
页码:745 / 785
页数:41
相关论文
共 368 条
[61]   Neuromorphic device architectures with global connectivity through electrolyte gating [J].
Gkoupidenis, Paschalis ;
Koutsouras, Dimitrios A. ;
Malliaras, George G. .
NATURE COMMUNICATIONS, 2017, 8
[62]   Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors [J].
Grisafe, Benjamin ;
Jerry, Matthew ;
Smith, Jeffrey A. ;
Datta, Suman .
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) :1602-1605
[63]   Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications [J].
Guan, Xinwei ;
Lei, Zhihao ;
Yu, Xuechao ;
Lin, Chun-Ho ;
Huang, Jing-Kai ;
Huang, Chien-Yu ;
Hu, Long ;
Li, Feng ;
Vinu, Ajayan ;
Yi, Jiabao ;
Wu, Tom .
SMALL, 2022, 18 (38)
[64]   Synaptic integration in dendritic trees [J].
Gulledge, AT ;
Kampa, BM ;
Stuart, GJ .
JOURNAL OF NEUROBIOLOGY, 2005, 64 (01) :75-90
[65]   Reservoir computing using back-end-of-line SiC-based memristors [J].
Guo, Dongkai ;
Kapur, Omesh ;
Dai, Peng ;
Han, Yisong ;
Beanland, Richard ;
Jiang, Liudi ;
de Groot, C. H. ;
Huang, Ruomeng .
MATERIALS ADVANCES, 2023, 4 (21) :5305-5313
[66]   A Diffusive Artificial Synapse Based on Charged Metal Nanoparticles [J].
Guo, Jiahui ;
Liu, Lin ;
Wang, Jingyu ;
Zhao, Xing ;
Zhang, Yuchun ;
Yan, Yong .
NANO LETTERS, 2024, 24 (06) :1951-1958
[67]   Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory [J].
Han, Ji Su ;
Le, Quyet Van ;
Kim, Hyojung ;
Lee, Yoon Jung ;
Lee, Da Eun ;
Im, In Hyuk ;
Lee, Min Kyung ;
Kim, Seung Ju ;
Kim, Jaehyun ;
Kwak, Kyung Ju ;
Choi, Min-Ju ;
Lee, Sol A. ;
Hong, Kootak ;
Kim, Soo Young ;
Jang, Ho Won .
SMALL, 2020, 16 (41)
[68]   A Review of Artificial Spiking Neuron Devices for Neural Processing and Sensing [J].
Han, Joon-Kyu ;
Yun, Seong-Yun ;
Lee, Sang-Won ;
Yu, Ji-Man ;
Choi, Yang-Kyu .
ADVANCED FUNCTIONAL MATERIALS, 2022, 32 (33)
[69]   Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films [J].
Han, Un-Bin ;
Lee, Donghwa ;
Lee, Jang-Sik .
NPG ASIA MATERIALS, 2017, 9 :e351-e351
[70]   Ion-tunable antiambipolarity in mixed ion-electron conducting polymers enables biorealistic organic electrochemical neurons [J].
Harikesh, Padinhare Cholakkal ;
Yang, Chi-Yuan ;
Wu, Han-Yan ;
Zhang, Silan ;
Donahue, Mary J. ;
Caravaca, April S. ;
Huang, Jun-Da ;
Olofsson, Peder S. ;
Berggren, Magnus ;
Tu, Deyu ;
Fabiano, Simone .
NATURE MATERIALS, 2023, 22 (02) :242-+