UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we fabricate a high-performance DmPD based on a graphene/InP Van der Waals heterostructure in a facile way, achieving a broadband response from ultraviolet-visible to near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene and a bottom electrode on the backside of an InP substrate. By flexibly switching among these three electrodes, the as-fabricated DmPD can operate in a self-powered photovoltaic mode for energy-efficient high-speed imaging or in a biased photoconductive mode for detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, in the self-powered photovoltaic mode, the DmPD leverages the vertically configured Schottky junction to achieve an on/off ratio of 8 x 103, a responsivity of 49.2 mA/W, a detectivity of 4.09 x 1011 Jones, and an ultrafast response, with a rising time (tau r) and falling time (tau f) of 2.8/6.2 mu s. In the photoconductive mode at a 1 V bias, the photogating effect enhances the responsivity to 162.5 A/W. This work advances the development of InP-based multifunctional optoelectronic devices.