Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxy

被引：0

作者：

Batista-Pessoa, Walter ^{[1
]}

Franck, Max ^{[2
]}

Nuns, Nicolas ^{[3
]}

Dabrowski, Jarek ^{[2
]}

Achehboune, Mohamed ^{[4
]}

Colomer, Jean-Francois ^{[4
]}

Henrard, Luc ^{[4
]}

Lukosius, Mindaugas ^{[2
]}

Wallart, Xavier ^{[1
]}

Vignaud, Dominique ^{[1
]}

机构：

[1] Univ Lille, Univ Polytech Hauts France, Junia ISEN, CNRS,UMR 8520 IEMN, F-59000 Lille, France

[2] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[3] Univ Lille, Univ Artois, CNRS, Cent Lille,IMEC Inst Michel Eugene Chevreul, F-59000 Lille, France

[4] Univ Namur, Namur Inst Struct Matter, Lab Phys Solide, Rue Bruxelles 61, B-5000 Namur, Belgium

来源：

APPLIED SURFACE SCIENCE | 2025年 / 699卷

关键词：

2D boron nitride; Molecular beam epitaxy; Step-flow growth; Borazine; Photoelectron spectroscopy; Surface roughness; CVD GROWTH; MONOLAYER; GRAPHENE;

D O I：

10.1016/j.apsusc.2025.163165

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of two-dimensional boron nitride (2D-BN) thin films on Ge (001) has been studied, with the ultimate goal of integrating this material into Si technology. Molecular beam epitaxy was used in a dedicated ultra-high vacuum chamber. To avoid the formation of thermal pits on heating the Ge film above similar to 750 degrees C, a two-step procedure was optimized. A thin 2D-BN buffer layer is first grown at similar to 730 degrees C using two independent cells for B and N, aimed at stabilizing the Ge surface and to prevent thermal pits formation upon further heating. The second-step at 800 degrees C makes use of another precursor, gaseous borazine, in the same chamber. The growth proceeds in a step-flow mode, and results in homogeneous nano-crystalline large-surface 2D-BN films with a similar to 1 nm roughness.

引用

页数：7

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