Recent Progress in Resistive Switching Memory Devices Covering Metal Oxides, Polymers, Bioinspired Materials, and Halide Perovskites

Recent developments in emerging memory technologies have increasingly highlighted resistive switching (RS) devices, which offer nonvolatile performance, the potential for random data access, simple fabrication, and a streamlined structural design. Owing to these advantages, researchers are now investigating a variety of materials to realize effective RS properties. This review comprehensively examines the latest progress in RS memory devices, focusing on metal oxides, polymers, bioinspired compounds, and halide perovskites, and elucidating their distinct attributes. By integrating key studies, the discussion links the specialized characteristics of these materials to their applicability in memory devices and evaluates innovative approaches and ultimately underscoring the substantial promise of these emerging technologies. Interdisciplinary research efforts and recent investigations further affirm the remarkable transformative potential of RS devices in next-generation electronics.