Strong elastic coupling: Out-of-plane strain, negative Poisson's ratio, and linear bandgap tunability

被引:0
作者
Wang, Chong [1 ]
Dai, Yang [2 ,3 ]
Fan, Luyuan [2 ,3 ]
Li, Penghui [1 ]
Jin, Tianye [1 ]
Bu, Yeqiang [4 ]
Li, Zeya [5 ,6 ]
Yuan, Hongtao [5 ,6 ]
Cheng, Yingchun [1 ,7 ]
Nie, Anmin [1 ]
Wang, Hongtao [4 ]
Liu, Zhongyuan [1 ]
Tian, Yongjun [1 ]
机构
[1] Yanshan Univ, Ctr High Pressure Sci, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066044, Peoples R China
[2] Nanjing Tech Univ, Jiangsu Natl Synerget Innovat Ctr Adv Mat, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Peoples R China
[3] Nanjing Tech Univ, Inst Adv Mat, Jiangsu Natl Synerget Innovat Ctr Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Peoples R China
[4] Zhejiang Univ, Ctr X Mech, Sch Aeronaut & Astronaut, Hangzhou 310027, Peoples R China
[5] Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210023, Peoples R China
[6] Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210023, Peoples R China
[7] Yanshan Univ, Key Lab Microstruct Mat Phys Hebei Prov, Qinhuangdao 066004, Peoples R China
基金
中国国家自然科学基金;
关键词
BLACK PHOSPHORUS; OPTOELECTRONICS; TRANSPORT; MOBILITY; MOS2;
D O I
10.1063/5.0260144
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain engineering is a promising strategy for tailoring the properties of two-dimensional (2D) materials. Despite the challenge of interlayer cleavage due to weak van der Waals interactions, by using in situ transmission electron microscopy, we demonstrate that large uniaxial tensile strain can be applied to black phosphorus (BP) not only along the zigzag (ZZ) and armchair (AC) directions but also in the out-of-plane (OP) direction. Notably, the maximum tensile strain along the OP direction reaches 5.0%, comparable to that along ZZ and AC directions. Moreover, a negative Poisson's ratio is directly observed between OP/AC and AC/OP directions, indicating strong elastic coupling originating from interlayer-intralayer electron redistribution under tensile strain. Interestingly, different from tensile strain along ZZ or AC, the bandgap of BP is linearly tunable under OP tensile strain. This work underscores OP tensile strain offering avenues for tuning electronic, optical, and magnetic properties of 2D materials and potential applications in strain electronics and flexible electronics.
引用
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页数:7
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共 28 条
[1]   Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch [J].
Balaghig, Leila ;
Bussone, Genziana ;
Grifone, Raphael ;
Huebner, Rene ;
Grenzer, Joerg ;
Ghorbani-Asl, Mahdi ;
Krasheninnikov, Arkady, V ;
Schneider, Harald ;
Helm, Manfred ;
Dimakis, Emmanouil .
NATURE COMMUNICATIONS, 2019, 10 (1)
[2]   3D strain-induced superconductivity in La2CuO4+δ using a simple vertically aligned nanocomposite approach [J].
Choi, Eun-Mi ;
Di Bernardo, Angelo ;
Zhu, Bonan ;
Lu, Ping ;
Alpern, Hen ;
Zhang, Kelvin H. L. ;
Shapira, Tamar ;
Feighan, John ;
Sun, Xing ;
Robinson, Jason ;
Paltiel, Yossi ;
Millo, Oded ;
Wang, Haiyan ;
Jia, Quanxi ;
MacManus-Driscoll, Judith L. .
SCIENCE ADVANCES, 2019, 5 (04)
[3]   Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires [J].
Conesa-Boj, S. ;
Li, A. ;
Koelling, S. ;
Brauns, M. ;
Ridderbos, J. ;
Nguyen, T. T. ;
Verheijen, M. A. ;
Koenraad, P. M. ;
Zwanenburg, F. A. ;
Bakkers, E. P. A. M. .
NANO LETTERS, 2017, 17 (04) :2259-2264
[4]   Achieving large uniform tensile elasticity in microfabricated diamond [J].
Dang, Chaoqun ;
Chou, Jyh-Pin ;
Dai, Bing ;
Chou, Chang-Ti ;
Yang, Yang ;
Fan, Rong ;
Lin, Weitong ;
Meng, Fanling ;
Hu, Alice ;
Zhu, Jiaqi ;
Han, Jiecai ;
Minor, Andrew M. ;
Li, Ju ;
Lu, Yang .
SCIENCE, 2021, 371 (6524) :76-78
[5]   Nanobubble Fragmentation and Bubble-Free-Channel Shear Localization in Helium-Irradiated Submicron-Sized Copper [J].
Ding, Ming-Shuai ;
Tian, Lin ;
Han, Wei-Zhong ;
Li, Ju ;
Ma, Evan ;
Shan, Zhi-Wei .
PHYSICAL REVIEW LETTERS, 2016, 117 (21)
[6]   Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio [J].
Du, Yuchen ;
Maassen, Jesse ;
Wu, Wangran ;
Luo, Zhe ;
Xu, Xianfan ;
Ye, Peide D. .
NANO LETTERS, 2016, 16 (10) :6701-6708
[7]   Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus [J].
Fei, Ruixiang ;
Yang, Li .
NANO LETTERS, 2014, 14 (05) :2884-2889
[8]   Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous [J].
Higashitarumizu, Naoki ;
Uddin, Shiekh Zia ;
Weinberg, Daniel ;
Azar, Nima Sefidmooye ;
Rahman, I. K. M. Reaz ;
Wang, Vivian ;
Crozier, Kenneth B. B. ;
Rabani, Eran ;
Javey, Ali .
NATURE NANOTECHNOLOGY, 2023, 18 (05) :507-+
[9]   Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure [J].
Huang, Le ;
Li, Yan ;
Wei, Zhongming ;
Li, Jingbo .
SCIENTIFIC REPORTS, 2015, 5
[10]   Strain-tunable van der Waals interactions in few-layer black phosphorus [J].
Huang, Shenyang ;
Zhang, Guowei ;
Fan, Fengren ;
Song, Chaoyu ;
Wang, Fanjie ;
Xing, Qiaoxia ;
Wang, Chong ;
Wu, Hua ;
Yan, Hugen .
NATURE COMMUNICATIONS, 2019, 10 (1)