Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases

被引：0

作者：

Lv, Ling ^{[1
,2
]}

Guo, Changjuan ^{[1
,2
]}

Xing, Muhan ^{[1
,2
]}

Zheng, Xuefeng ^{[1
,2
]}

Cao, Yanrong ^{[3
]}

Hu, Peipei ^{[4
]}

Liu, Jie ^{[4
]}

Ma, Xiaohua ^{[1
,2
]}

Hao, Yue ^{[1
,2
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

[2] Xidian Univ, State Key Lab Wide Bandgap Semicond Devices & Inte, Xian 710071, Peoples R China

[3] Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China

[4] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Stress; Logic gates; HEMTs; MODFETs; Wide band gap semiconductors; Aluminum gallium nitride; Leakage currents; Ions; Radiation effects; Monitoring; Gallium nitride (GaN); heavy ion irradiation; high-electron-mobility transistors (HEMTs); single-event effect (SEE); GAN; IRRADIATION; TRANSISTORS; TRANSIENTS;

D O I：

10.1109/TED.2025.3550111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single-event effects (SEEs) of AlGaN/GaN HEMT devices under OFF-state, semi-ON-state, and ON-state are systematically investigated from experiments and TCAD simulations. Experimental results show that heavy ion radiation causes the most serious damage to the devices under the OFF-state. Three regions of nondestructive, leakage degradation, and catastrophic failures induced by SEE are observed as drain-to-source voltage increases. The simulation results show that the peak electric field is largest under the OFF-state and the current collection is more significant at high-voltage bias, further confirming the severity of the SEE in the OFF-state. It has been shown that high single-event transient currents under the OFF-state can cause permanent damage to the device, leading to an increase in device leakage current.

引用

页码：2467 / 2473

页数：7

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