Optimizing electrostatic chuck performance through ZrO2/Al2O3 ratio and doping components (SiO2 and Y2O3)

This study explores the enhancement of electrostatic chuck (ESC) performance through the modulation of the ZrO2/Al2O3 ratio, with additional doping of Y2O3 and SiO2, deposited via Atmospheric Plasma Spraying (APS). Three different ZrO2/Al2O3 mixed powders, further doped with Y2O3 and SiO2, were prepared and analyzed for their electrical and mechanical properties. By utilizing APS to deposit these coatings, we achieved uniform and crack-free layers with controlled thickness and consistent mechanical properties. Notably, the mixed powder with the highest ZrO2 content achieved a relative dielectric constant of about 22 with a volume resistivity of similar to 1.0 x 10(1)(4) Omega cm. The enhanced dielectric constant and reduced resistivity induced the Johnsen-Rahbek (J-R) effect, leading to an improved clamping force 25 gf/cm(2) on glass substrate, exceeding the industrial requirement of 10 similar to 15 gf/cm(2). Additionally, this ZrO2/Al2O3 composition demonstrated a breakdown voltage of approximately 4200 V and a dielectric strength of about 17 V/mu m, showcasing better voltage stability compared to traditional TiO2-doped Al2O3. The high breakdown strength and excellent adhesion force suggest that ZrO2-Al2O3 coatings, along with Y2O3 and SiO2 doping, offer superior performance and reliability, making them viable alternatives to traditional TiO2-doped Al2O3 chucks in advanced semiconductor manufacturing applications.