All-optical diode based on asymmetric nonlinear optical absorption in ternary transition metal chalcogenides

被引:0
作者
Yan, Lei [1 ]
Shen, Dechao [1 ]
He, Qinyong [1 ]
Ge, Anping [2 ,3 ]
Ma, Guohong [1 ]
Dai, Ye [1 ]
Sun, Liaoxin [2 ,3 ]
Zhang, Saifeng [1 ]
机构
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
ULTRAFAST CARRIER DYNAMICS; RAMAN-SPECTRA; LAYER;
D O I
10.1364/OL.553268
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
As the typical representative of ternary transition metal chalcogenides, CrPS4 and MnPS3 exhibit unique light-matter interactions, demonstrating great potential in photonic devices. In this work, we systematically studied the nonlinear optical (NLO) responses of CrPS4 and MnPS3 flakes by the I-scan technique. CrPS4 and MnPS3 flakes show saturable absorption and reverse saturation absorption excited by fs laser at wavelengths of 600 nm, respectively. Furthermore, utilizing the non-degenerate transient absorption technology, we observed that the fast and slow carrier relaxation times of CrPS4 at different probe wavelengths were components with constants of about 1.4-3 ps and 490-1420 ps, respectively. Their excellent ultrafast NLO properties imply that they can be applied in photoelectronic fields for advanced and functional devices. Here, we designed and demonstrated an all-optical diode based on a CrPS4/MnPS3 tandem structure by breaking the timereversal symmetry, and it achieved nonreciprocal transmission of light similar to that of a p-n electron diode. (c) 2025 are reserved.
引用
收藏
页码:2109 / 2112
页数:4
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