Thermodynamic Modeling of Phase-Formation Conditions in the Si-O-C-H-He and Si-O-C-H-N-He Systems

被引:0
作者
Shestakov, V. A. [1 ,2 ]
Kosinova, M. L. [1 ]
机构
[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ Architecture & Civil Engn, Novosibirsk 630008, Russia
关键词
thermodynamic modeling; chemical vapor deposition; thin films; hexamethyldisiloxane; silicon oxide; silicon carbide; silicon nitride; SILICON OXYCARBIDE GLASSES; POLYMER-DERIVED CERAMICS; FILMS; TEMPERATURE; CARBON; PRECURSORS; BEHAVIOR; DIOXIDE; PLASMA;
D O I
10.1134/S003602362560039X
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Thermodynamic modeling of film synthesis from the vapor phase in the Si-O-C-H-He and Si-O-C-H-N-He systems involving the decomposition of hexamethyldisiloxane (HMDSO) was performed. The calculation of chemical equilibria used in the modeling involved the minimization of the Gibbs energy of the system, implemented using the electronic materials database (EMDB). It was shown that various phase complexes containing silicon oxide, silicon carbide, and silicon nitride can be produced by CVD processes of these systems. The results of the thermodynamic modeling can be useful for developing methods for the synthesis of film coatings based on these phase complexes.
引用
收藏
页码:567 / 572
页数:6
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