Plasma-enhanced chemical vapor deposition of SiO2 films at 400 kHz and 100 °C using tetraethyl orthosilicate with oxygen and SiH4 with nitrous oxide

被引：0

作者：

Kusuda, Yutaka ^{[1
,2
]}

Asai, Yuki ^{[2
]}

Miyashita, Takahiro ^{[2
]}

Nishinaka, Hiroyuki ^{[3
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

[2] Samco Inc, Dept Res & Dev, Kyoto 6128443, Japan

[3] Kyoto Inst Technol, Fac Elect Engn & Elect, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2025年 / 64卷 / 04期

关键词：

SILICON DIOXIDE; THIN-FILMS; SIO2; TETRAETHYLORTHOSILICATE; MECHANISMS; KINETICS;

D O I：

10.35848/1347-4065/adc1d3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study investigated various properties of SiO2 films deposited using SiH4 and tetraethyl orthosilicate (TEOS) at a frequency of 400 kHz in plasma-enhanced chemical vapor deposition (PECVD) at 100 degrees C. The TEOS-SiO2 film exhibited a higher refractive index and density than the SiH4-SiO2 film. Electron spin resonance measurements at -180 degrees C revealed fewer structural defects in TEOS-SiO2, while atomic force microscopy showed smoother surface morphology in TEOS-SiO2 compared to SiH4-SiO2. These differences are attributed to the surface-mediated growth mechanism of TEOS compared to the gas-phase-dominated reactions of SiH4. These results demonstrate that TEOS-PECVD at 400 kHz is a promising technique for forming high-quality SiO2 films at low temperatures. (c) 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

引用

页数：4

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