Plasma-enhanced chemical vapor deposition of SiO2 films at 400 kHz and 100 °C using tetraethyl orthosilicate with oxygen and SiH4 with nitrous oxide

被引:0
作者
Kusuda, Yutaka [1 ,2 ]
Asai, Yuki [2 ]
Miyashita, Takahiro [2 ]
Nishinaka, Hiroyuki [3 ]
机构
[1] Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto
[2] Research and Development Department, Samco Inc., Fushimi, Kyoto
[3] Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Sakyo, Kyoto
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2025年 / 64卷 / 04期
关键词
Electron resonance - Electron spin resonance spectroscopy - Nitrogen oxides - Organoclay - Photodissociation - Photoionization - Plasma CVD - Silica - Silicon oxides;
D O I
10.35848/1347-4065/adc1d3
中图分类号
学科分类号
摘要
This study investigated various properties of SiO2 films deposited using SiH4 and tetraethyl orthosilicate (TEOS) at a frequency of 400 kHz in plasma-enhanced chemical vapor deposition (PECVD) at 100 °C. The TEOS-SiO2 film exhibited a higher refractive index and density than the SiH4-SiO2 film. Electron spin resonance measurements at −180 °C revealed fewer structural defects in TEOS-SiO2, while atomic force microscopy showed smoother surface morphology in TEOS-SiO2 compared to SiH4-SiO2. These differences are attributed to the surface-mediated growth mechanism of TEOS compared to the gas-phase-dominated reactions of SiH4. These results demonstrate that TEOS-PECVD at 400 kHz is a promising technique for forming high-quality SiO2 films at low temperatures. © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
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