A new temperature sensing Ba3Ga2O6: Bi3+, Eu3+ phosphors with a high sensitivity due to effective energy transfer from Bi3+ to Eu3+ ions

High-temperature solid-state method was adopted to synthesize one novel Bi3+, Eu3+ co-doped Ba3Ga2O6 phosphors in this work. Results of X-ray diffraction (XRD) characterization, scanning electron microscope (SEM) characterization and energy dispersive spectrometer (EDS) characterization indicate that Bi3+ and Eu3+ ions were successfully doped into lattice. The emission spectrum of the phosphor contains a broad emission band covering the 350-580 nm spectral region peaked at 416 nm in response to Bi3+ ions, and several red emission peaks in response to Eu3+ under excitation at 336 nm. WLED device made with this phosphor exhibits CIE coordinates of (0.3561, 0.311), a color temperature CCT of 4381 K, and a high color rendering index CRI value of 81.5. It is suggested that BGO:0.005Bi(3+), 0.15Eu(3+) phosphor hold potential applications in WLEDs. Additionally, FIR technology was adopted to compute SA and SR values. At 293 K, maximum SR value BGO:0.005Bi(3+), 0.1Eu(3+) phosphor was 1.1 % K-1, and maximum SA value was 2.3 % K-1. Such findings indicate that BGO: Bi3+, Eu3+ phosphors are of promising utilization as non-contact optical temperature measurement materials.