Point defect formation at finite temperatures with machine learning force fields

被引:0
作者
Mosquera-Lois, Irea [1 ,2 ]
Klarbring, Johan [1 ,2 ,3 ]
Walsh, Aron [1 ,2 ]
机构
[1] Imperial Coll London, Thomas Young Ctr, London SW7 2AZ, England
[2] Imperial Coll London, Dept Mat, London SW7 2AZ, England
[3] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
基金
英国工程与自然科学研究理事会; 瑞典研究理事会;
关键词
INITIO MOLECULAR-DYNAMICS; FREE-ENERGIES; MIGRATION ENTROPIES; VACANCY; TRANSITION; DIFFUSION; SIMULATION; PARAMETERS; EFFICIENCY; SILICON;
D O I
10.1039/d4sc08582e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Point defects dictate the properties of many functional materials. The standard approach to modelling the thermodynamics of defects relies on a static description, where the change in Gibbs free energy is approximated by the internal energy. This approach has a low computational cost, but ignores contributions from atomic vibrations and structural configurations that can be accessed at finite temperatures. We train a machine learning force field (MLFF) to explore dynamic defect behaviour using Te+1i and V+2Te in CdTe as exemplars. We consider the different entropic contributions (e.g., electronic, spin, vibrational, orientational, and configurational) and compare methods to compute the defect free energies, ranging from a harmonic treatment to a fully anharmonic approach based on thermodynamic integration. We find that metastable configurations are populated at room temperature and thermal effects increase the predicted concentration of Te+1i by two orders of magnitude - and can thus significantly affect the predicted properties. Overall, our study underscores the importance of finite-temperature effects and the potential of MLFFs to model defect dynamics at both synthesis and device operating temperatures.
引用
收藏
页数:11
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