Formation of Porous Silicon Oxides for Single-Layer Anti-reflection Coatings on Transparent Materials Using Atmospheric-Pressure Very High-Frequency Plasma

被引:0
作者
Uon, Leapheng [1 ]
Mizusawa, Naoto [1 ]
Yamauchi, Reo [1 ]
Ohmi, Hiromasa [1 ,2 ]
Kakiuchi, Hiroaki [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Precis Engn, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
[2] Osaka Univ, Res Ctr Ultraprecis Sci & Technol, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
关键词
Silicon oxide; Porous film; Single layer; PECVD; Anti-reflection coating; CHEMICAL-VAPOR-DEPOSITION; SIOX FILMS;
D O I
10.1007/s11090-025-10559-y
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
We study a formation process of single-layer anti-reflection coatings using porous silicon oxide (SiOx) films formed in atmospheric-pressure (AP), very high-frequency (VHF) plasma. A two-step process is proposed for forming porous SiOx films: deposition of carbon and hydrogen-containing silicon oxide (SiOCH) layers on a substrate on which polystyrene nanospheres are pre-arranged in hexamethyldisiloxane and hydrogen-fed AP-VHF plasma and subsequent removal of the polystyrene nanospheres/transformation of the SiOCH layer into inorganic SiOx one by post-oxidation in oxygen-fed AP-VHF plasma. Transmission electron microscopy and energy dispersive X-ray analyses have confirmed that the polystyrene nanospheres underlying the SiOCH layer are effectively removed by the post-oxidation and that air is introduced into the place where the polystyrene nanospheres are present, which are supported by the optical reflectance measurements. The reaction mechanism during the post-oxidation process is discussed, based on the Fourier transform infrared adsorption spectroscopy measurements.
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页数:14
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