Effect of lanthanide (La, Nd, Gd) doping on the structural and photoelectrochemical properties of WO3 thin films synthesized by sol–gel

被引：0

作者：

Sayda Dinorah Coria-Quiñones ^{[1
]}

Ingrid G. Rodríguez-Gutiérrez ^{[2
]}

Martín Adelaido Hernández-Landaverde ^{[3
]}

Gerko Oskam ^{[1
]}

Jorge Alejandro Torres-Ochoa ^{[4
]}

Ana Korina Díaz-García ^{[5
]}

Omar Jiménez-Sandoval ^{[1
]}

机构：

[1] Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, Qro, Querétaro

[2] Laboratório de Energia Alternativa e Nanomateriais (LEAN), Universidade Federal do ABC (UFABC), SP, Santo André

[3] Brazilian Nanotechnology National Laboratory (LNNANO), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas

[4] Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Mérida, Antigua Carretera a Progreso Km. 6, A.P. 73, Cordemex, Yuc, Mérida

[5] Center for Nanoscience and Sustainable Technologies (CNATS), Departamento de Sistemas Físicos, Químicos y Naturales, Universidad Pablo de Olavide, Sevilla

[6] Universidad Politécnica Juventino Rosas, Hidalgo 102, Gto, Juventino Rosas

[7] Facultad de Bioanálisis, Región Xalapa, Universidad Veracruzana, Médicos S/N, U.H. del Bosque, Zona Universitaria, Ver, Xalapa

来源：

Journal of Materials Research | 2025年 / 40卷 / 8期

关键词：

Dopant; Photoelectrochemistry; Rare-earths; Sol–gel; Thin film; Tungsten;

D O I：

10.1557/s43578-025-01577-9

中图分类号：

学科分类号：

摘要：

In this study, WO3 and 2 at.% WO3:Ln (Ln = La, Nd, Gd) thin films were prepared by sol–gel, from a novel and highly stable precursor solution based on tungstic acid. The structural characterization of the films is consistent with the dopant atoms occupying interstitial positions in the crystal lattice, leading to modifications in the preferential orientation from the (200) to the (002) plane of the monoclinic phase of WO3. The lanthanide doping reduces the band gap, enhancing the photoelectrochemical properties. Electrochemical impedance spectroscopy measurements show that the lanthanide dopants reduce the charge-transfer resistance and enhance the hole lifetime in WO3; furthermore, the Mott-Schottky analysis shows an increase in the donor density (ND) values. These results suggest that doping with La, Nd and Gd is a favorable strategy to improve the efficiency of WO3 photoanodes, helping to elucidate which element most effectively enhances its photoelectrochemical properties. © The Author(s) 2025.

引用

页码：1252 / 1264

页数：12