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Systematic computational study of oxide adsorption properties for applications in photocatalytic CO2 reduction
被引:0
作者:
Andriuc, Oxana
[1
,2
,3
]
Siron, Martin
[2
,3
,4
,5
,6
]
Persson, Kristin A.
[4
,7
]
机构:
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Liquid Sunlight Alliance, Berkeley, CA 94720 USA
[3] Lawrence Berkeley Natl Lab, Chem Sci Div, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[5] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[6] Toyota Res Inst, Los Altos, CA 94022 USA
[7] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
来源:
关键词:
Density functional theory;
Adsorption;
Oxide surfaces;
Scaling relations;
CO2;
reduction;
ANATASE TIO2(101) SURFACE;
TOTAL-ENERGY CALCULATIONS;
PLANE-WAVE;
EFFICIENT;
MECHANISM;
WATER;
TIO2;
H2O;
HYDROGEN;
METHANOL;
D O I:
10.1016/j.susc.2025.122745
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
While the adsorption properties of transition metal catalysts have been widely studied, leading to the discovery of various scaling relations, descriptors of catalytic activity, and well-established computational models, a similar understanding of semiconductor catalysts has not yet been achieved. In this work, we present a high-throughput density functional theory investigation into the adsorption properties of 5 oxides of interest to the photocatalytic CO2 reduction reaction: TiO2 (rutile and anatase), SrTiO3, NaTaO3, and CeO2. Using a systematic approach, we exhaustively identify unique surfaces and construct adsorption structures to undergo geometry optimizations. We then perform a data-driven analysis, which reveals the presence of weak adsorption energy scaling relations, the propensity of adsorbates of interest to interact with oxygen surface sites, and the importance of slab deformation upon adsorption. Our findings are presented in the context of experimental observations and in comparison to previously studied classes of catalysts, such as pure metals and tellurium-containing semiconductors, and reinforce the need for a comprehensive approach to the study of site-specific surface phenomena on semiconductors.
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页数:11
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