Quasi-One-Dimensional Ta2PdSe6 with Strong Topological Surface States for High-Performance and Polarization-Sensitive Terahertz Detection

被引:0
作者
Yang, Liu [1 ,2 ,3 ]
Wang, Dong [1 ,2 ,3 ]
Hu, Zhen [4 ]
Dong, Zhuo [2 ,3 ]
Zhang, Yan [5 ]
Tang, Keqin [1 ,2 ,3 ]
Wang, Pengdong [2 ,3 ]
Zhang, Junrong [2 ,3 ]
Chen, Cheng [2 ,3 ]
Hou, Xingang [1 ,2 ,3 ]
Li, Jie [6 ]
Yu, Qiang [2 ,3 ]
Wang, Junyong [2 ,3 ]
Wang, Lin [4 ]
Zhang, Kai [2 ,3 ]
机构
[1] Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[5] Yangtze Memory Technol Co Ltd, Wuhan 430074, Peoples R China
[6] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金; 上海市自然科学基金;
关键词
topological surface states; quasi-one-dimensional; Ta2PdSe6; terahertz; high-performance; polarization-sensitive; INSULATORS;
D O I
10.1021/acs.nanolett.5c00328
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Topological surface states (TSS) in certain low-dimensional materials impart gapless band structure, massless quasiparticles, and nonlinear optical behavior, enabling distinct advantages for applications in low-energy photon detection. Herein, we develop a quasi-one-dimensional (quasi-1D) transition metal chalcogenide material, Ta2PdSe6, with robust TSS, which exhibits a gapless band structure protected by spin-momentum locking and time-reversal symmetry, alongside exceptional transport properties, including a high carrier mobility exceeding 10(4) cm(2)<middle dot>V-1<middle dot>s(-1). The quasi-1D chain-like structure induces pronounced anisotropy and significantly reduces carrier scattering, further enhancing transport efficiency. Benefiting from these unique characteristics, the Ta2PdSe6-based terahertz (THz) detectors demonstrate outstanding performance with responsivity exceeding 3.63 A<middle dot>W-1, a noise equivalent power of 7.4 pW<middle dot>Hz(-1/2) at 0.28 THz, ultrafast response speed of 1.15 mu s, and an exceptional photocurrent anisotropic ratio of 68.3. These findings highlight the significant potential of strong TSS in emerging materials to achieve high-performance and multifunctional THz detection.
引用
收藏
页码:7690 / 7698
页数:9
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