Chemically-driven control of electrical resistivity of high-entropy alloys

Chemical control of electrical properties in high-entropy alloys (HEAs) remains largely unexplored despite their potential for next-generation electronic devices. Herein, we demonstrate unprecedented tuning of electrical characteristics in CrMnFeCoNi thin films by systematically incorporating elements with distinct metallic radii (Cu, Al, Ag, and Zr). Comprehensive structural analysis reveals composition-dependent phase evolution: Cu maintains a face-centered cubic (fcc) structure with reduced nanotwins, Al induces fcc-to-bcc transition, Zr drives amorphization, and Ag forms distinctive nanoprecipitates. Through these targeted chemical modifications, we achieve a remarkable resistivity range of 89-324 mu Omega & sdot;cm and exceptional TCR control, including a near-zero value of -2.86 ppm/K in CrMnFeCoNiCu37 that outperforms conventional low-TCR alloys like Constantan and Manganin. This chemically-driven approach enables remarkable TCR tunability from +355 to -480 ppm/K, establishing HEAs as promising candidates for sustainable thermocouple devices and integrated circuits, offering superior performance and scalability compared to traditional materials.