m-MTDATA:WSe2:Alq3 Nanocomposite-Based Broadband Photodetector

The authors demonstrate a high response broad band photodetector using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate as hole transport layer, 4,4 ',4 ''-tris(3-methylphenylphenylamino) triphenylamine (m-MTDATA), tris(8-hydroxyquinoline) aluminum (III) (Alq(3)), and Tungsten di-selenide (WSe2) material-based nanocomposite (NC) film working as an active layer prepared through dispersion method. The photodetector is fabricated on an ITO-coated glass substrate. A spin coater is utilized for the film (NC) deposition, followed by aluminum (Al) electrode deposition in a thermal evaporation unit. The proposed structure Al/m-MTDATA:WSe2:Alq(3)/ITO-coated glass-based broadband photodetector exhibits a broad photo response with maximum responsivity R-S (A/W) of 523, 550, and 430 A/W; at 350 nm (UV), 550 nm (visible), and 850 nm (IR) at +1V bias. The device possesses the rise/fall time of 4.11 mu s/2.55 mu s at 350 nm, 0.27 mu s/0.33 mu s at 550 nm, and 1.17 mu s/1.16 mu s at 850 nm. The proposed organic-inorganic NC has encouraging properties for optoelectronic applications.