Recent Advances of Plasma Technology Applications in 2D Materials and Electronics

被引:0
作者
Feng, Xiaolei [1 ]
Tao, Hong [1 ]
Yang, Sijie [1 ]
Liu, Ci [1 ]
Wei, Changhao [1 ]
Wang, Yuankun [1 ]
Zhao, Hongyang [1 ]
Yao, Shuhua [2 ]
Cheng, Zhenxiang [3 ]
机构
[1] Wuhan Inst Technol, Hubei Key Lab Plasma Chem & Adv Mat, 206 Guanggu 1st Rd, Wuhan 430205, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Univ Wollongong, Inst Superconducting & Elect Mat, Innovat Campus,Squires Way, North Wollongong, NSW 2500, Australia
来源
ADVANCED MATERIALS TECHNOLOGIES | 2025年
基金
中国国家自然科学基金;
关键词
2D materials; controlled synthesis; electronics; performance tuning; plasma technology; LOW-TEMPERATURE SYNTHESIS; HEXAGONAL BORON-NITRIDE; 2-DIMENSIONAL MATERIALS; GRAPHENE; MOS2; TRANSISTORS; GROWTH; PHOSPHORUS; MONOLAYERS; ULTRAFAST;
D O I
10.1002/admt.202402207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
2D materials have shown significant promise in the electronics industry, primarily due to their ultrathin structure and complex energy band configurations, positioning them as strong contenders to challenge Moore's Law. Despite their potential, the advancement of 2D materials has been impeded by the absence of effective methods for controlled epitaxial synthesis and performance modification. Plasma technology has emerged as a powerful tool for the synthesis and modification of these materials, garnering substantial interest. This review begins with an overview of plasma technology, exploring the mechanisms through which plasma interacts with 2D materials. It then delves into the synthesis and modification processes of 2D materials using plasma, highlighting key examples such as graphene, transition metal dichalcogenides, and hexagonal boron nitride. The discussion extends to include Janus materials and other variants, such as oxidized, doped, phase-change engineered, and etched-thinned materials, along with their applications in electronics. The paper concludes by summarizing the current optimal outcomes of technology in this field and providing an outlook on developments and directions.
引用
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页数:23
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