Superconductivity in Tin Telluride Films Grown by Molecular Beam Epitaxy

被引:0
作者
Antonio Gonzalez [1 ]
Samuel J. Poage [1 ]
Bernardo Langa Jr. [2 ]
Deepak Sapkota [2 ]
Salva Salmani-Rezaie [3 ]
Shalinee Chikara [4 ]
Michael D. Williams [5 ]
David A. Muller [6 ]
Kasra Sardashti [3 ]
Kaveh Ahadi [4 ]
机构
[1] North Carolina State University,Department of Materials Science and Engineering
[2] Clemson University,Department of Physics and Astronomy
[3] Cornell University,School of Applied and Engineering Physics
[4] Kavli Institute at Cornell for Nanoscale Science,Department of Physics
[5] Cornell University,Department of Electrical and Computer Engineering
[6] National High Magnetic Field Laboratory,Department of Materials Science and Engineering
[7] Clark Atlanta University,undefined
[8] The Ohio State University,undefined
[9] The Ohio State University,undefined
关键词
Molecular beam epitaxy; tin telluride; superconductivity; topological insulator; ferroelectricity;
D O I
10.1007/s11664-025-11908-5
中图分类号
学科分类号
摘要
The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium concentration. The critical field of superconductivity, however, does not follow the same behavior as critical temperature with indium concentration and exhibits a carrier-density-dependent violation of the Pauli limit. The electron–phonon coupling, according to the McMillan formula, exhibits a systematic enhancement with indium concentration, suggesting a potential violation of Bardeen–Cooper–Schrieffer (BCS) weak coupling at high indium concentrations.
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页码:5792 / 5799
页数:7
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