Effect of Low-Energy Proton Radiation on the Degradation of Silicon Carbide Schottky Diodes

被引:0
作者
Baba, Tamana [1 ]
Hasbullah, Nurul Fadzlin [1 ]
Javed, Yasir [2 ]
Khan, Zafar Iqbal [2 ]
Sulaiman, Nurul Nabiilah [1 ]
机构
[1] Int Islamic Univ Malaysia, Dept Elect & Comp Engn, Kulliyyah Engn, Kuala Lumpur, Selangor, Malaysia
[2] Prince Sultan Univ, Coll Comp Sci & Informat Sci, POB 66833, Riyadh 11586, Saudi Arabia
关键词
Silicon carbide (SiC); Schottky diodes (SDs); radiation; degradation; proton; defects; ideality factor; IRRADIATION; TEMPERATURE; DEVICES;
D O I
10.1007/s11664-025-11939-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon carbide (SiC) Schottky diodes are gaining traction for their potential in high-voltage, high-temperature, and radiation-resistant applications. While superior to traditional silicon (Si) diodes, their radiation hardness requires further exploration, particularly at lower energies. Although high-energy radiation undoubtedly degrades devices, understanding the impact of lower-energy radiation is crucial for real-world applications. This study employed 8 MeV proton radiation, considered relatively low energy in radiation physics, to investigate the response of SiC Schottky diodes. Interestingly, the irradiated devices displayed a slight decrease in reverse leakage current, indicating improved blocking ability. Encouragingly, both forward current and capacitance remained relatively unaffected, with a minor change in the ideality factor. Microscopy confirmed these findings by revealing no surface-level defects or leakage current hotspots, solidifying the exceptional resilience of SiC Schottky diodes to even lower-energy radiation.
引用
收藏
页码:5984 / 5992
页数:9
相关论文
共 44 条
[1]  
Abdullah Yusof, 2016, Materials Science Forum, V840, P281, DOI 10.4028/www.scientific.net/MSF.840.281
[2]   Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications [J].
Ahmed, Mohammed Hassan ;
Wang, Mingyu ;
Hassan, Muhammad Arshad Shehzad ;
Ullah, Irfan .
IEEE ACCESS, 2019, 7 :75768-75781
[3]  
Baba Tamana, 2023, 2023 8th International Conference on Business and Industrial Research (ICBIR), P932, DOI 10.1109/ICBIR57571.2023.10147696
[4]   Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes [J].
Ball, D. R. ;
Hutson, J. M. ;
Javanainen, A. ;
Lauenstein, J. -M. ;
Galloway, K. F. ;
Johnson, R. A. ;
Alles, M. L. ;
Sternberg, A. L. ;
Sierawski, B. D. ;
Witulski, A. F. ;
Reed, R. A. ;
Schrimpf, R. D. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) :22-28
[5]   Radiation Induced Response of Ba0.5Sr0.5TiO3 Based Tunable Capacitors Under Gamma Irradiation [J].
Barala, Surendra Singh ;
Singh, Jitendra ;
Ranwa, Sapana ;
Kumar, Mahesh .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) :1873-1878
[6]  
Chancellor Jeffery C., 2014, Life-Basel, V4, P491, DOI 10.3390/life4030491
[7]   Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs [J].
Chao, Der-Sheng ;
Shih, Hua-Yu ;
Jiang, Jheng-Yi ;
Huang, Chih-Fang ;
Chiang, Ching-Yu ;
Ku, Ching-Shun ;
Yen, Cheng-Tyng ;
Lee, Lurng-Sheng ;
Hsu, Fu-Jen ;
Chu, Kuo-Ting ;
Hung, Chien-Chung ;
Lee, Chwan-Ying .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)
[8]   The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts [J].
Cinar, Kuebra ;
Coskun, C. ;
Aydogan, S. ;
Asil, Hatice ;
Gur, Emre .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (06) :616-621
[9]   Targeted and non-targeted effects of ionizing radiation [J].
Desouky, Omar ;
Ding, Nan ;
Zhou, Guangming .
JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, 2015, 8 (02) :247-254
[10]   Graphene-Silicon Schottky Diodes for Photodetection [J].
Di Bartolomeo, Antonio ;
Luongo, Giuseppe ;
Iemmo, Laura ;
Urban, Francesca ;
Giubileo, Filippo .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 17 (06) :1133-1137