Design and Experiment of High-Frequency Circuit for High-Power 0.65 THz TWT

被引:0
|
作者
Zhang, Yinyu [1 ]
Zheng, Yuan [1 ]
Wang, Yuxin [1 ]
Lu, Zhigang [1 ]
Zhang, Ping [1 ]
Wang, Zhanliang [1 ]
Wang, Shaomeng [1 ]
Gong, Yubin [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
High power; slow wave structure (SWS); terahertz (THz) source; traveling wave tube (TWT);
D O I
10.1109/TED.2025.3564568
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-power sawtooth waveguide (STW) high-frequency circuit operating in a 0.65 terahertz (THz) traveling wave tube (TWT) is designed, fabricated, and cold-tested in this article. To address the challenge of the THz electromagnetic (EM) wave being amplified through beam-wave interaction while experiencing significant attenuation on the structure walls of the slow wave structure (SWS). The SWS design process emphasizes achieving a balance between interaction impedance and transmission loss to maximize output power. The optimized STW configuration achieves an interaction impedance of 0.76 Omega with a transmission loss of -1.41 dB/mm. Driven by a 19.5 kV, 15 mA pencil beam (PB), particle-in-cell (PIC) simulations confirm the superiority of this balanced design, demonstrating a saturation output power of 2.75 W. This performance surpasses reference high-impedance (2.52 W) and low-loss (2.35 W) designs by 9.1% and 17.0%, respectively. Iterative fabrication refinements via nano-computer numerical control (CNC) and deep reactive ion etching (DRIE) techniques were implemented to further reduce EM wave attenuation. Cold-test results showed an insertion loss of -10.50 dB at 650 GHz for the 6.6 mm-long nano-CNC fabricated circuit and -25.46 dB for the 25.74 mm DRIE circuit, fitting to equivalent conductivities of 3.0 x 10(7) S/m and 3.6 x 10(7) S/m, respectively, exceeding the conventional benchmark 2.0 x 10(7) S/m over the target frequency range.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] High-Power Transmission Line Transformer Design for Plasma Generators
    Eroglu, Abdullah
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2014, 42 (04) : 969 - 975
  • [32] Magnetic Design Considerations for High-Power Wireless Charging Systems
    Lawton, Patrick A. J.
    Lin, Feiyang J.
    Covic, Grant A.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (08) : 9972 - 9982
  • [33] Application of High-power Frequency Conversion Technology in the Fracturing Pumping Equipment
    Li, Lei
    Zhang, Zengnian
    Dong, Fuqiang
    Wang, Zhixi
    Li, Huachuan
    Liu, Qimeng
    PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020), 2020, : 632 - 637
  • [34] A Compact and Broadband Directional Coupler for High-Power Radio Frequency Applications
    Wang, Zheng-Bin
    Wei, Xin
    Fang, Han-Ping
    Zhang, Hua-Mei
    Zhang, Ye-Rong
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2020, 30 (02) : 164 - 166
  • [35] High-power frequency stabilized tapered diode amplifiers at 1064 nm
    Ostendorf, R.
    Schilling, C.
    Kaufel, G.
    Moritz, R.
    Wagner, J.
    Kochem, G.
    Friedmann, P.
    Gilly, J.
    Kelemen, M. T.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII, 2009, 7198
  • [36] High-power optical parametric frequency converters with addressable wavelengths in the IR
    Jungbluth, B.
    Elsen, F.
    Wueppen, J.
    Nyga, S.
    Strotkamp, M.
    Hoffmann, D.
    Poprawe, R.
    SOLID STATE LASERS XXVI: TECHNOLOGY AND DEVICES, 2017, 10082
  • [37] Design of High Voltage, High Power and High Frequency Transformer in LCC Resonant Converter
    Liu, Jun
    Sheng, Licheng
    Shi, Jianjiang
    Zhang, Zhongchao
    He, Xiangning
    APEC: 2009 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1- 4, 2009, : 1034 - 1038
  • [38] A Wideband Bias Circuit with Low Parasitic Inductance for High-Power GaN Pulsed Power Amplifiers
    Fu, Chao
    Fang, Wenrao
    Fan, Ruyu
    Liu, Changkun
    2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
  • [39] Some Advances in Theory and Experiment of High-Frequency Vacuum Electron Devices in China
    Gong, Yubin
    Zhou, Qing
    Hu, Min
    Zhang, Yaxin
    Li, Xinyi
    Gong, Huarong
    Wang, Jianxun
    Liu, Diwei
    Liu, Yinghui
    Duan, Zhaoyun
    Feng, Jinjun
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2019, 47 (05) : 1971 - 1990
  • [40] A Frequency-Tracking FPGA Chip for High-Power Ultrasound Resonator
    Ma, Kai-Hsing
    Chang, Wen-Chung
    Lee, Yung-Chun
    ROCOM'09: PROCEEDINGS OF THE 9TH WSEAS INTERNATIONAL CONFERENCE ON ROBOTICS, CONTROL AND MANUFACTURING TECHNOLOGY: ADVANCED ROBOTICS, CONTROL AND ADVANCED MANUFACTURING SYSTEMS, 2009, : 25 - 27