Nitrogen concentration dependent optical defects transition in single crystal diamond through low pressure high temperature annealing

被引:0
作者
Lin, Wang [1 ]
Lv, Xianyi [1 ]
Wang, Qiliang [1 ]
Li, Liuan [1 ]
Zou, Guangtian [1 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
关键词
LPHT annealing; Nitrogen; Defect transition; Single crystal diamond; CHEMICAL-VAPOR-DEPOSITION; CVD DIAMOND; DIFFUSION; HYDROGEN; HPHT; GROWTH; OXYGEN;
D O I
10.1016/j.vacuum.2025.114329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of nitrogen concentration on the transition of optical defects in single crystal diamond under low pressure high temperature (LPHT) annealing are extensively investigated for the first time. The origin of the brown color is attributed to the superposition absorption of Ns0, vacancy clusters, NVH0, as well as unsaturated bonds. Diamonds with higher nitrogen concentration require elevated annealing temperature and prolonged durations to enhance optical properties. Our findings reveal that Ns0 can be captured by vacancies to form NV centers at lower annealing temperature, whereas undergoing aggregation into Hydrogen-modified A-type nitrogen aggregation center (Am center) and N2VH0 at elevated temperature. In highly nitrogen-doped diamond, sufficient densities of Ns0 and vacancies favor NV center formation. Conversely, aggregation processes dominate in lightly doped diamonds. This nitrogen-dependent transition mechanism provides some insights for the controversial photoluminescence (PL) variations observed during LPHT annealing.
引用
收藏
页数:8
相关论文
共 50 条
[1]  
Amin A., 2019, 16 IR NAT C CHEM ENG
[2]   Nitrogen in Diamond [J].
Ashfold, Michael N. R. ;
Goss, Jonathan P. ;
Green, Ben L. ;
May, Paul W. ;
Newton, Mark E. ;
Peaker, Chloe V. .
CHEMICAL REVIEWS, 2020, 120 (12) :5745-5794
[3]  
Atumi M.K., 2014, First Principles Simulations of the Structure and Incorporation of Point Defects in Diamond
[4]   Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films [J].
Ballutaud, D ;
Jomard, F ;
Le Duigou, J ;
Theys, B ;
Chevallier, J ;
Deneuville, A ;
Pruvost, F .
DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :1171-1174
[5]   The characterization of diamond single crystal growing along (100) after annealing treatment under high pressure and high temperature [J].
Chen, Xiaozhou ;
Deng, Fuming ;
Bing, Xiaomeng ;
Liu, Ziyi ;
Xing, Xiaotian ;
Deng, Wenli ;
Xiang, Yu ;
Cao, Donglin ;
Zhang, Sheng ;
Feng, Yiqian ;
Wang, Yan .
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 2024, 121
[6]   Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices [J].
Cheng, Zhe ;
Mu, Fengwen ;
Yates, Luke ;
Suga, Tadatomo ;
Graham, Samuel .
ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (07) :8376-8384
[7]   Research progress of diamond/copper composites with high thermal conductivity [J].
Dai, Shugang ;
Li, Jinwang ;
Lu, Ningxiang .
DIAMOND AND RELATED MATERIALS, 2020, 108
[8]   Determination of the C defect concentration in HPHT annealed type IaA diamonds from UV-VIS absorption spectra [J].
De Weerdt, F. ;
Collins, A. T. .
DIAMOND AND RELATED MATERIALS, 2008, 17 (02) :171-173
[9]   Effect of boron doping levels on the piezoresistive properties of boron-doped diamond films prepared by HFCVD [J].
Fang, Ke ;
Zhang, Xueyu ;
Deng, Mingjun ;
Gai, Zhigang ;
Zhang, Mei ;
Yang, You .
VACUUM, 2025, 231
[10]  
Field J.E., 1979, PROPERTIES DIAMOND